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Paper Abstract and Keywords
Presentation 2015-01-30 10:00
Feasibility study of high-frequency power converter using SiC power device
Shinji Sato, Hidekazu Tanisawa, Hiroki Takahashi, Takeshi Anzai, Kohei Hiyama, Yoshinori Murakami, Hiroshi Sato (FUPET) EE2014-34
Abstract (in Japanese) (See Japanese page) 
(in English) SiC power devices can be operated in the higher temperature than Si power devices. And also, it can achieve the high-speed switching operation with lower switching losses, so that the high frequency switching can be realized. Thus, there is a possibility that a cooling system and electrical filter can be smaller. It can leads the whole converter system smaller. In this paper, we discuss the design of high frequency power converter using SiC power devices.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC power device / JFET / Strain capacitor / wide-gap semiconductor / DC-DC converter / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 429, EE2014-34, pp. 31-35, Jan. 2015.
Paper # EE2014-34 
Date of Issue 2015-01-22 (EE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2014-34

Conference Information
Committee EE  
Conference Date 2015-01-29 - 2015-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Sakura-No-Baba JOSAIEN 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2015-01-EE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Feasibility study of high-frequency power converter using SiC power device 
Sub Title (in English)  
Keyword(1) SiC power device  
Keyword(2) JFET  
Keyword(3) Strain capacitor  
Keyword(4) wide-gap semiconductor  
Keyword(5) DC-DC converter  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shinji Sato  
1st Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
2nd Author's Name Hidekazu Tanisawa  
2nd Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
3rd Author's Name Hiroki Takahashi  
3rd Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
4th Author's Name Takeshi Anzai  
4th Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
5th Author's Name Kohei Hiyama  
5th Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
6th Author's Name Yoshinori Murakami  
6th Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
7th Author's Name Hiroshi Sato  
7th Author's Affiliation R&D Partnership for Future Power Electronics Technology (FUPET)
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Speaker Author-1 
Date Time 2015-01-30 10:00:00 
Presentation Time 30 minutes 
Registration for EE 
Paper # EE2014-34 
Volume (vol) vol.114 
Number (no) no.429 
Page pp.31-35 
#Pages 5 
Date of Issue 2015-01-22 (EE) 

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