Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2015-02-05 13:30
[Invited Talk] Development of Si-based thermoelectric nanomaterial using ultrathin SiO2 film technique
Yoshiaki Nakamura (Osaka Univ.) ED2014-138 SDM2014-147
Abstract (in Japanese) (See Japanese page) 
(in English) The structure of connected nanodots (NDs) epitaxially grown on Si substrates was proposed as thermoelectric nanomaterials. Connected NDs are expected to reduce thermal conductivity. Epitaxial growth plays a role of keeping high electrical conductivity owing to the coherency of carrier wavefunction in NDs. In terms of Si with high power factor, reduction of thermal conductivity is the most important challenge. We fabricated the stacked epitaxial Si ND structures for development of Si-based thermoelectric materials using ultrathin SiO2 film technique, where each epitaxial ND has an identical crystal orientation and an ultrathin SiO2 film as surrounding barrier. We observed the large reduction of thermal conductivity in this nanostructure.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon / Nanodots / Thermoelectronics / Thermal conductivity / Epitaxial growth / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 443, SDM2014-147, pp. 1-5, Feb. 2015.
Paper # SDM2014-147 
Date of Issue 2015-01-29 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2014-138 SDM2014-147

Conference Information
Committee SDM ED  
Conference Date 2015-02-05 - 2015-02-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To SDM 
Conference Code 2015-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Si-based thermoelectric nanomaterial using ultrathin SiO2 film technique 
Sub Title (in English)  
Keyword(1) Silicon  
Keyword(2) Nanodots  
Keyword(3) Thermoelectronics  
Keyword(4) Thermal conductivity  
Keyword(5) Epitaxial growth  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yoshiaki Nakamura  
1st Author's Affiliation Osaka Univeristy (Osaka Univ.)
2nd Author's Name  
2nd Author's Affiliation ()
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2015-02-05 13:30:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # ED2014-138, SDM2014-147 
Volume (vol) vol.114 
Number (no) no.442(ED), no.443(SDM) 
Page pp.1-5 
#Pages 5 
Date of Issue 2015-01-29 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan