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Paper Abstract and Keywords
Presentation 2015-03-02 11:35
[Invited Talk] Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface
Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165
Abstract (in Japanese) (See Japanese page) 
(in English) We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed Ge electronic devices. In this study, we have examined the formation of epitaxial NiGe layers on Ge(001) and Ge(110) substrates and have investigated the electrical conduction property of NiGe/Ge Schottky contacts with various interface structures. We clarified the strong dependence of the Schottky barrier height on the crystalline structure of the NiGe/Ge interfaces. Also, we demonstrate the possibility that an epitaxial NiGe/Ge interface promises the alleviation of the Fermi level pining phenomenon and the control of the Schottky barrier height.
Keyword (in Japanese) (See Japanese page) 
(in English) germanium / metal/Semiconductor contact / epitaxial growth / germanide / Schottky barrier height / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 469, SDM2014-165, pp. 17-22, March 2015.
Paper # SDM2014-165 
Date of Issue 2015-02-23 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-03-02 - 2015-03-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) http://www.ieice.org/jpn/about/syozai.html 
Paper Information
Registration To SDM 
Conference Code 2015-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface 
Sub Title (in English)  
Keyword(1) germanium  
Keyword(2) metal/Semiconductor contact  
Keyword(3) epitaxial growth  
Keyword(4) germanide  
Keyword(5) Schottky barrier height  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Osamu Nakatsuka  
1st Author's Affiliation Nagoya Univ. (Nagoya Univ.)
2nd Author's Name Yunsheng Deng  
2nd Author's Affiliation Nagoya Univ. (Nagoya Univ.)
3rd Author's Name Akihiro Suzuki  
3rd Author's Affiliation Nagoya Univ. (Nagoya Univ.)
4th Author's Name Mitsuo Sakashita  
4th Author's Affiliation Nagoya Univ. (Nagoya Univ.)
5th Author's Name Noriyuki Taoka  
5th Author's Affiliation Nagoya Univ. (Nagoya Univ.)
6th Author's Name Shigeaki Zaima  
6th Author's Affiliation Nagoya Univ. (Nagoya Univ.)
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Speaker Author-1 
Date Time 2015-03-02 11:35:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2014-165 
Volume (vol) vol.114 
Number (no) no.469 
Page pp.17-22 
#Pages 6 
Date of Issue 2015-02-23 (SDM) 

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