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Paper Abstract and Keywords
Presentation 2015-03-05 11:05
[Invited Talk] A Design and Fabrication of 2.45GHz-Band High Efficiency Class-F Power Amplifier using GaN-HEMT
Gaku Nishio, Toshio Ishizaki (Ryukoku Univ.) MW2014-205 ICD2014-118
Abstract (in Japanese) (See Japanese page) 
(in English) For APMC2014 Student Design Competition, a GaN-HEMT amplifier was designed. First, a basic amplifier that does not take care of harmonics was designed and its small signal performance and large signal performance were confirmed. Especially, differences of stabilization circuits for preventing oscillation were considered by simulation. A circuit for preventing oscillation, which does not affect the performance at desired frequency, was selected. Then, class-F amplifier, in which the second harmonic and the third harmonic are processed by load circuit, was developed. The developed amplifier showed very good performance with output power of 8.7W and power added efficiency (PAE) of 54.8%. In this report, design procedure of class-F load circuit and performance of the developed class-F amplifier are described.
Keyword (in Japanese) (See Japanese page) 
(in English) APMC2014 / Student Design Competition / Microwave / Amplifier / Class-F / / /  
Reference Info. IEICE Tech. Rep., vol. 114, no. 498, MW2014-205, pp. 19-22, March 2015.
Paper # MW2014-205 
Date of Issue 2015-02-26 (MW, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2014-205 ICD2014-118

Conference Information
Committee MW ICD  
Conference Date 2015-03-05 - 2015-03-06 
Place (in Japanese) (See Japanese page) 
Place (in English) University of Fukui 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Integrated Circuit / Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2015-03-MW-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Design and Fabrication of 2.45GHz-Band High Efficiency Class-F Power Amplifier using GaN-HEMT 
Sub Title (in English)  
Keyword(1) APMC2014  
Keyword(2) Student Design Competition  
Keyword(3) Microwave  
Keyword(4) Amplifier  
Keyword(5) Class-F  
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Keyword(8)  
1st Author's Name Gaku Nishio  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Toshio Ishizaki  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker Author-1 
Date Time 2015-03-05 11:05:00 
Presentation Time 20 minutes 
Registration for MW 
Paper # MW2014-205, ICD2014-118 
Volume (vol) vol.114 
Number (no) no.498(MW), no.499(ICD) 
Page pp.19-22 
#Pages 4 
Date of Issue 2015-02-26 (MW, ICD) 

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