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Paper Abstract and Keywords
Presentation 2015-04-16 13:55
Fabrication of all-organic transistors with patterned P3HT thin films doped with F4-TCNQ
Daisuke Tadaki, Teng Ma (Tohoku Univ.), Yasuo Kimura (Tokyo Univ. of Technology), Michio Niwano (Tohoku Univ.) ED2015-2
Abstract (in Japanese) (See Japanese page) 
(in English) Flexible organic devices have been widely studied recently because they have features such as low-cost, thin, light-weight and large-area, and they can be briefly fabricated by a solution process. Organic transistors in which organic materials are used as active layers have also been studied to be applied to organic devices. Since electrode layers of organic transistors are generally formed by a vacuum evaporation of metal such as gold (Au), there are some problems of taking a high fabrication cost, requiring a long-time process, and concerning about high temperatures of substrates by an evaporation. Therefore, we tried to fabricate a so-called p-i-p type of all-organic transistor in which a same material is used and some parts are molecularly doped to be electrode layers. At first, it was found that carriers (holes) were generated by a charge-transfer process, and they contributed to increase the conductivities of doped layers, using infrared absorption spectroscopy of the multiple internal reflection geometry (MIR-IRAS) and four probe method measurements. Based on this result, we actually fabricated the p-i-p type of transistor. Specifically, after the p layer was patterned by a photolithography process, the transistor was fabricated by drop-casting a non-doped solution to a groove which was made by digging a part of the patterned p+ layer. Accordingly, we succeeded in a reproducible fabrication of the transistor which has a short channel.
Keyword (in Japanese) (See Japanese page) 
(in English) organic transistor / molecular doping / infrared absorption spectroscopy of the multiple internal reflection geometry (MIR-IRAS) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 5, ED2015-2, pp. 7-10, April 2015.
Paper # ED2015-2 
Date of Issue 2015-04-09 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2015-04-16 - 2015-04-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Laboratory for Nanoelectronics and Spintronics 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2015-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of all-organic transistors with patterned P3HT thin films doped with F4-TCNQ 
Sub Title (in English)  
Keyword(1) organic transistor  
Keyword(2) molecular doping  
Keyword(3) infrared absorption spectroscopy of the multiple internal reflection geometry (MIR-IRAS)  
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1st Author's Name Daisuke Tadaki  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Teng Ma  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yasuo Kimura  
3rd Author's Affiliation Tokyo University of Technology (Tokyo Univ. of Technology)
4th Author's Name Michio Niwano  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2015-04-16 13:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-2 
Volume (vol) vol.115 
Number (no) no.5 
Page pp.7-10 
#Pages 4 
Date of Issue 2015-04-09 (ED) 

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