Paper Abstract and Keywords |
Presentation |
2015-04-17 10:55
SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo/CREST JST) ED2015-13 Link to ES Tech. Rep. Archives: ED2015-13 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized by electron-beam lithography with a bilayer resist followed by two-angle shadow evaporation. As the dimensions of tunnel junctions are miniaturized, fluctuation of lithography limits the uniformity of junctions. In this work, we propose a SiO-assisted Dolan technique as a method for improving the uniformity. We also propose an evaluation method of junction uniformity via electrical conduction properties of one-dimensional junction arrays. We experimentally demonstrate better junction uniformity of the SiO-assisted Dolan technique in comparison with those fabricated using the conventional one. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Dolan technique / tiny tunnel junctions / charging effect / shadow evaporation / electron-beam lithography / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 5, ED2015-13, pp. 65-70, April 2015. |
Paper # |
ED2015-13 |
Date of Issue |
2015-04-09 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2015-13 Link to ES Tech. Rep. Archives: ED2015-13 |
Conference Information |
Committee |
ED |
Conference Date |
2015-04-16 - 2015-04-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Laboratory for Nanoelectronics and Spintronics |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2015-04-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity |
Sub Title (in English) |
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Keyword(1) |
Dolan technique |
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tiny tunnel junctions |
Keyword(3) |
charging effect |
Keyword(4) |
shadow evaporation |
Keyword(5) |
electron-beam lithography |
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1st Author's Name |
Takato Tokuyama |
1st Author's Affiliation |
The University of Electro-Communications/CREST JST (UEC Tokyo/CREST JST) |
2nd Author's Name |
Hiroshi Shimada |
2nd Author's Affiliation |
The University of Electro-Communications/CREST JST (UEC Tokyo/CREST JST) |
3rd Author's Name |
Yoshinao Mizugaki |
3rd Author's Affiliation |
The University of Electro-Communications/CREST JST (UEC Tokyo/CREST JST) |
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Speaker |
Author-3 |
Date Time |
2015-04-17 10:55:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2015-13 |
Volume (vol) |
vol.115 |
Number (no) |
no.5 |
Page |
pp.65-70 |
#Pages |
6 |
Date of Issue |
2015-04-09 (ED) |