Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2015-05-28 16:40
Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25
Abstract (in Japanese) (See Japanese page) 
(in English) In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we analyzed a physical mechanism for the forward characteristics at the high voltage by using a floating electrode measurement and a device simulation. The current slope in the current-voltage curves decreased at high voltage larger than 3.5 V. From measurement of the voltage by the floating electrodes, a parasitic resistance of the GaN epitaxial layer at the anode side was found to increase at the voltage larger than 3.5 V. By device simulation, the anode parasitic resistance was found to increase due to degradation for the electron velocity at the high electric field.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Schottky barrier diode / floating electrode / forward characteristics / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 63, ED2015-23, pp. 35-39, May 2015.
Paper # ED2015-23 
Date of Issue 2015-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-23 CPM2015-8 SDM2015-25

Conference Information
Committee ED CPM SDM  
Conference Date 2015-05-28 - 2015-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Venture Business Laboratory, Toyohashi University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) crystal growth、devices characterization , etc. 
Paper Information
Registration To ED 
Conference Code 2015-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Schottky barrier diode  
Keyword(3) floating electrode  
Keyword(4) forward characteristics  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Syuzo Yamaguchi  
1st Author's Affiliation Saga University (Saga Univ.)
2nd Author's Name Toshiyuki Oishi  
2nd Author's Affiliation Saga University (Saga Univ.)
3rd Author's Name Yutaro Yamaguchi  
3rd Author's Affiliation Mitsubishi Electric Corpration (Mitsubishi Electric Corp.)
4th Author's Name Koji Yamanaka  
4th Author's Affiliation Mitsubishi Electric Corpration (Mitsubishi Electric Corp.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-2 
Date Time 2015-05-28 16:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-23, CPM2015-8, SDM2015-25 
Volume (vol) vol.115 
Number (no) no.63(ED), no.64(CPM), no.65(SDM) 
Page pp.35-39 
#Pages 5 
Date of Issue 2015-05-21 (ED, CPM, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan