Paper Abstract and Keywords |
Presentation |
2015-05-28 16:40
Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 Link to ES Tech. Rep. Archives: ED2015-23 CPM2015-8 SDM2015-25 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we analyzed a physical mechanism for the forward characteristics at the high voltage by using a floating electrode measurement and a device simulation. The current slope in the current-voltage curves decreased at high voltage larger than 3.5 V. From measurement of the voltage by the floating electrodes, a parasitic resistance of the GaN epitaxial layer at the anode side was found to increase at the voltage larger than 3.5 V. By device simulation, the anode parasitic resistance was found to increase due to degradation for the electron velocity at the high electric field. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Schottky barrier diode / floating electrode / forward characteristics / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 63, ED2015-23, pp. 35-39, May 2015. |
Paper # |
ED2015-23 |
Date of Issue |
2015-05-21 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2015-23 CPM2015-8 SDM2015-25 Link to ES Tech. Rep. Archives: ED2015-23 CPM2015-8 SDM2015-25 |
Conference Information |
Committee |
ED CPM SDM |
Conference Date |
2015-05-28 - 2015-05-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Venture Business Laboratory, Toyohashi University of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
crystal growth、devices characterization , etc. |
Paper Information |
Registration To |
ED |
Conference Code |
2015-05-ED-CPM-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
Schottky barrier diode |
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floating electrode |
Keyword(4) |
forward characteristics |
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1st Author's Name |
Syuzo Yamaguchi |
1st Author's Affiliation |
Saga University (Saga Univ.) |
2nd Author's Name |
Toshiyuki Oishi |
2nd Author's Affiliation |
Saga University (Saga Univ.) |
3rd Author's Name |
Yutaro Yamaguchi |
3rd Author's Affiliation |
Mitsubishi Electric Corpration (Mitsubishi Electric Corp.) |
4th Author's Name |
Koji Yamanaka |
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Mitsubishi Electric Corpration (Mitsubishi Electric Corp.) |
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Speaker |
Author-2 |
Date Time |
2015-05-28 16:40:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2015-23, CPM2015-8, SDM2015-25 |
Volume (vol) |
vol.115 |
Number (no) |
no.63(ED), no.64(CPM), no.65(SDM) |
Page |
pp.35-39 |
#Pages |
5 |
Date of Issue |
2015-05-21 (ED, CPM, SDM) |
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