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Paper Abstract and Keywords
Presentation 2015-05-28 15:40
Growth and preliminary MOSFETs of corundum-structured oxide semiconductors
Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) ED2015-21 CPM2015-6 SDM2015-23
Abstract (in Japanese) (See Japanese page) 
(in English) Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by mist CVD. Emphasis was given for $alpha$-In$_2$O$_3$ allowing reasonable crystalline and electrical properties for power device applications with the use of an $alpha$-Ga$_2$O$_3$ buffer layer on sapphire. An $alpha$-In$_2$O$_3$MOSFET showed the clear pinch-off characteristics with the field effect mobility and effective mobility of 60 and 217 cm$^2$/Vs, respectively. together with the on-off ratio of drain current of 10$^6$. The use of mist CVD for the insulator-semiconductor structure was advantageous for low-cost devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium Oxide / Indium Oxide / $alpha$-Ｔype Structure / Buffer Layer / Mist CVD / Wide Band Gap Semiconductors / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 64, CPM2015-6, pp. 27-30, May 2015.
Paper # CPM2015-6 
Date of Issue 2015-05-21 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-21 CPM2015-6 SDM2015-23

Conference Information
Committee ED CPM SDM  
Conference Date 2015-05-28 - 2015-05-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Venture Business Laboratory, Toyohashi University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) crystal growth、devices characterization , etc. 
Paper Information
Registration To CPM 
Conference Code 2015-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth and preliminary MOSFETs of corundum-structured oxide semiconductors 
Sub Title (in English)  
Keyword(1) Gallium Oxide  
Keyword(2) Indium Oxide  
Keyword(3) $alpha$-Ｔype Structure  
Keyword(4) Buffer Layer  
Keyword(5) Mist CVD  
Keyword(6) Wide Band Gap Semiconductors  
Keyword(7)  
Keyword(8)  
1st Author's Name Yoshito Ito  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Kentaro Kaneko  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Shizuo Fujita  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-3 
Date Time 2015-05-28 15:40:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2015-21, CPM2015-6, SDM2015-23 
Volume (vol) vol.115 
Number (no) no.63(ED), no.64(CPM), no.65(SDM) 
Page pp.27-30 
#Pages 4 
Date of Issue 2015-05-21 (ED, CPM, SDM) 

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