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| Presentation | 2015-05-29 09:00 Design and Evaluation of High-Power High-Efficiency GaN HEMT Amplifier/Rectifier Daisuke Mori, Ryo Ishikawa, Kazuhiko Honjo (UEC)  MW2015-27 Link to ES Tech. Rep. Archives: MW2015-27 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A high-efficiency transistor power amplifier can convert RF power into DC power. When the RF power is supplied from an output port of the amplifier, the DC power is outputted from the drain-bias node of the amplifier. Thus, the amplifier works as a rectifier. If a gate-switching timing is adjusted for each operation, a time reversal duality is observed between each voltage and current waveform at each transistor. In this case, each operation exhibits the same efficiency. Therefore, the high-efficiency amplifier that the gate-side circuit is readjusted for the rectifier operation works as the high-efficiency rectifier. By using the same GaN HEMTs and drain-side circuits, high-power and high-efficiency amplifiers and rectifiers have been fabricated and evaluated at 5.8 GHz band. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Microwave wireless power transfer / Transistor amplifier / Transistor rectifier / High efficiency / High Power / GaN HEMTs / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 66, MW2015-27, pp. 37-42, May 2015. | |
| Paper # | MW2015-27 | |
| Date of Issue | 2015-05-21 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2015-27 Link to ES Tech. Rep. Archives: MW2015-27 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2015-05-28 - 2015-05-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | The Univ. of Electro-Commun. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2015-05-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design and Evaluation of High-Power High-Efficiency GaN HEMT Amplifier/Rectifier |
| Sub Title (in English) | |
| Keyword(1) | Microwave wireless power transfer |
| Keyword(2) | Transistor amplifier |
| Keyword(3) | Transistor rectifier |
| Keyword(4) | High efficiency |
| Keyword(5) | High Power |
| Keyword(6) | GaN HEMTs |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Daisuke Mori |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Ryo Ishikawa |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Kazuhiko Honjo |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2015-05-29 09:00:00 |
| Presentation Time | 30 minutes |
| Registration for | MW |
| Paper # | MW2015-27 |
| Volume (vol) | vol.115 |
| Number (no) | no.66 |
| Page | pp.37-42 |
| #Pages | 6 |
| Date of Issue | 2015-05-21 (MW) |
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