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Paper Abstract and Keywords
Presentation 2015-06-19 13:00
First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45
Abstract (in Japanese) (See Japanese page) 
(in English) Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closely related to the great success of silicon technology, the answer has not yet been clarified at the atomic level. In this study, we investigated hydrogen annealing effect in thermally-oxidized Si/SiO2 interface by the first-principles calculation method to reply the question. According to the Si-emission model of thermal oxidation, Si atoms are spontaneously emitted from the interface, leading to the lattice distortion and dangling bonds at the vacancies. We clarified that the interface states originating from the dangling bonds can be passivated by hydrogen terminations of Si atoms with dangling bonds. This means that the interface-state density can be decreased by hydrogen annealing after thermal oxidation. Our results rationalize the reason why the quality of Si/SiO2 interface formed by thermal oxidation is higher than that by the other technique such as CVD.
Keyword (in Japanese) (See Japanese page) 
(in English) thermal-oxidation / Si/SiO2 interface / First-Principles Study / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-45, pp. 37-40, June 2015.
Paper # SDM2015-45 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation 
Sub Title (in English)  
Keyword(1) thermal-oxidation  
Keyword(2) Si/SiO2 interface  
Keyword(3) First-Principles Study  
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1st Author's Name Shingo Kawachi  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Hiroki Shirakawa  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Masaaki Araidai  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Hiroyuki Kageshima  
4th Author's Affiliation Shimane University (Shimane Univ.)
5th Author's Name Tetsuo Endoh  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Kenji Shiraishi  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2015-06-19 13:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-45 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.37-40 
#Pages 4 
Date of Issue 2015-06-12 (SDM) 

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