Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2015-06-19 09:50
[Invited Lecture] Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy
Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39
Abstract (in Japanese) (See Japanese page) 
(in English) Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission from filled traps has been used to study traps in MOCVD n-GaN. For Schottky diodes employed in this study, electron traps are detected with Deep level transient spectroscopy (DLTS) using bias pulses, while hole traps with Minority carrier transient spectroscopy (MCTS) using above-band-gap light pulses. A total of nine electron traps and a total of five hole traps are observed in MOCVD n-GaN. Among them, the Ev+0.86~0.89 eV hole trap has high trap concentration（~1016 cm-3）and might affect the performance of various GaN-based devices. It is possible that the Ev+0.86~0.89 eV hole trap is associated with carbon- and Ga vacancy-related defects. We present a method to distinguish between Ga vacancy-related and carbon-related hole traps by the combination of MCTS and optical deep level transient spectroscopy (ODLTS) using below-band-gap light pulses.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / trap / DLTS / MCTS / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-39, pp. 5-10, June 2015.
Paper # SDM2015-39 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-39

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) trap  
Keyword(3) DLTS  
Keyword(4) MCTS  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yutaka Tokuda  
1st Author's Affiliation Aichi Institute of Technology (Aich Inst. of Technol.)
2nd Author's Name  
2nd Author's Affiliation ()
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2015-06-19 09:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-39 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.5-10 
#Pages 6 
Date of Issue 2015-06-12 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan