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Presentation 2015-06-19 09:50
[Invited Lecture] Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy
Yutaka Tokuda (Aich Inst. of Technol.) SDM2015-39 Link to ES Tech. Rep. Archives: SDM2015-39
Abstract (in Japanese) (See Japanese page) 
(in English) Capacitance transient spectroscopy based on the depletion layer capacitance transients resulting from carrier emission from filled traps has been used to study traps in MOCVD n-GaN. For Schottky diodes employed in this study, electron traps are detected with Deep level transient spectroscopy (DLTS) using bias pulses, while hole traps with Minority carrier transient spectroscopy (MCTS) using above-band-gap light pulses. A total of nine electron traps and a total of five hole traps are observed in MOCVD n-GaN. Among them, the Ev+0.86~0.89 eV hole trap has high trap concentration(~1016 cm-3)and might affect the performance of various GaN-based devices. It is possible that the Ev+0.86~0.89 eV hole trap is associated with carbon- and Ga vacancy-related defects. We present a method to distinguish between Ga vacancy-related and carbon-related hole traps by the combination of MCTS and optical deep level transient spectroscopy (ODLTS) using below-band-gap light pulses.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / trap / DLTS / MCTS / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-39, pp. 5-10, June 2015.
Paper # SDM2015-39 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-39 Link to ES Tech. Rep. Archives: SDM2015-39

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) trap  
Keyword(3) DLTS  
Keyword(4) MCTS  
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1st Author's Name Yutaka Tokuda  
1st Author's Affiliation Aichi Institute of Technology (Aich Inst. of Technol.)
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Speaker Author-1 
Date Time 2015-06-19 09:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-39 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.5-10 
#Pages
Date of Issue 2015-06-12 (SDM) 


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