Paper Abstract and Keywords |
Presentation |
2015-06-19 16:10
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 Link to ES Tech. Rep. Archives: SDM2015-53 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid buried oxide (BOX) post-annealed in various ambiences at 300-500ºC were investigated using the four-point probe pseudo-metal-oxide-semiconductor field effect transistor (pseudo-MOSFET) method. After post-annealing, both accumulation and inversion modes of transistor operation were observed with hysteresis in the channel conductance versus gate voltage curves. The threshold voltage shift from the ideal threshold voltage (~0 V) caused by interface defects was improved. The GeOI substrates post-annealed in an O2 ambience at 400ºC showed the improvement most remarkably. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOSFET / Al2O3 / germanium-on-insulator (GeOI) / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-53, pp. 81-86, June 2015. |
Paper # |
SDM2015-53 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-53 Link to ES Tech. Rep. Archives: SDM2015-53 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-06-19 - 2015-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing |
Sub Title (in English) |
|
Keyword(1) |
MOSFET |
Keyword(2) |
Al2O3 |
Keyword(3) |
germanium-on-insulator (GeOI) |
Keyword(4) |
|
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Keisuke Yoshida |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Shotaro Takeuchi |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Yoshiaki Nakamura |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Akira Sakai |
4th Author's Affiliation |
Osaka University (Osaka Univ.) |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-2 |
Date Time |
2015-06-19 16:10:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2015-53 |
Volume (vol) |
vol.115 |
Number (no) |
no.108 |
Page |
pp.81-86 |
#Pages |
6 |
Date of Issue |
2015-06-12 (SDM) |