Paper Abstract and Keywords |
Presentation |
2015-06-19 17:10
[Invited Lecture]
Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST) SDM2015-56 Link to ES Tech. Rep. Archives: SDM2015-56 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scattering mechanism to be responsible for the mobility of MoS2 MOSFETs, the effective mobility has been estimated from the C-V and I-V curves. The difficulty of the estimation is on the C-V measurements because the device area is so small that fF-level capacitance measurement is required. We discuss a C-V measurement technique for such a small capacitance and clarify its problems. The estimated effective mobility curve indicated that surface roughness scattering notably affected the mobility. Furthermore, the scanning tunneling microscope image exhibited atomic scale roughness on the cleaved MoS2 surface. These results suggest that the surface roughness is responsible for the mobility in MoS2 MOSFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
VLSI / MOSFET / Transition Metal Dichalcogenides / MoS2 / C-V measurements / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-56, pp. 99-103, June 2015. |
Paper # |
SDM2015-56 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2015-56 Link to ES Tech. Rep. Archives: SDM2015-56 |