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Paper Abstract and Keywords
Presentation 2015-06-19 09:30
[Invited Lecture] Interface states characterization of Al2O3/AlGaN/GaN structures
Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38
Abstract (in Japanese) (See Japanese page) 
(in English) To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching of AlGaN surface, in this work, we compared the measured capacitance-voltage (C-V) characteristics with those calculated, considering interface states density at the Al2O3/AlGaN interface. As a complementary method, photo-assisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface states density located near the midgap of the AlGaN. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al2O3/AlGaN interface.
Keyword (in Japanese) (See Japanese page) 
(in English) Al2O3 / AlGaN/GaN / MOS / HEMT / Interface state / Dry etching / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-38, pp. 1-4, June 2015.
Paper # SDM2015-38 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-38

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface states characterization of Al2O3/AlGaN/GaN structures 
Sub Title (in English)  
Keyword(1) Al2O3  
Keyword(2) AlGaN/GaN  
Keyword(3) MOS  
Keyword(4) HEMT  
Keyword(5) Interface state  
Keyword(6) Dry etching  
Keyword(7)  
Keyword(8)  
1st Author's Name Zenji Yatabe  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tamotsu Hashizume  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2015-06-19 09:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-38 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.1-4 
#Pages 4 
Date of Issue 2015-06-12 (SDM) 

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