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Paper Abstract and Keywords
Presentation 2015-06-19 10:50
[Invited Lecture] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions
Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41
Abstract (in Japanese) (See Japanese page) 
(in English) SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC devices with different poly-types. In this study, SiC MOSFETs with junctions consisted of 3C- and 4H-SiC are simulated in order to propose the device structure which exhibit better channel properties than conventional 4H-SiC MOSFETs without any degradation of the breakdown voltage. There exist the resistance between 3C- and 4H-SiC, ascribe to the band offset between these. We connected 3C- and 4H-SiC by electron tunneling for suppressing the resistance between these. It is found that materials which exhibit energy bandgap between 3C- and 4H-SiC have to be inserted between 3C- and 4H-SiC. In addition, their impurity concentrations must be carefully designed.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / 3C-SiC / 4H-SiC / Hetero junction / Tunneling / breakdown / on resistance / different poly-type  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-41, pp. 17-20, June 2015.
Paper # SDM2015-41 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2015-41

Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) 3C-SiC  
Keyword(3) 4H-SiC  
Keyword(4) Hetero junction  
Keyword(5) Tunneling  
Keyword(6) breakdown  
Keyword(7) on resistance  
Keyword(8) different poly-type  
1st Author's Name Muentaka Noguchi  
1st Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
2nd Author's Name Toshiaki Iwamatsu  
2nd Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
3rd Author's Name Naruhisa Miura  
3rd Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
4th Author's Name Shuhei Nakata  
4th Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
5th Author's Name Satoshi Yamakawa  
5th Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
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Speaker Author-1 
Date Time 2015-06-19 10:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-41 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.17-20 
#Pages 4 
Date of Issue 2015-06-12 (SDM) 

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