Paper Abstract and Keywords |
Presentation |
2015-06-19 11:30
[Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43 Link to ES Tech. Rep. Archives: SDM2015-43 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the NO-annealed MOS capacitor sample are different from that of the wet-annealed sample. The NO-annealing generates positive charges in the insulator layer. The interface state density, Dit from Ei+1.5 eV (EC−0.1 eV) to an energy near the conduction band edge increases by NO-annealing. The type of Dit near the conduction band edge in the nitrided SiO2/SiC interface is identified as donor. It is considered that Coulomb scattering causes decreasing the n-channel mobility of the SiO2/ SiC interface by NO-annealing. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / interface state density / SiO2/SiC interface / NO-annealing / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-43, pp. 27-30, June 2015. |
Paper # |
SDM2015-43 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-43 Link to ES Tech. Rep. Archives: SDM2015-43 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-06-19 - 2015-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface |
Sub Title (in English) |
|
Keyword(1) |
4H-SiC |
Keyword(2) |
interface state density |
Keyword(3) |
SiO2/SiC interface |
Keyword(4) |
NO-annealing |
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Wakana Takeuchi |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Kensaku Yamamoto |
2nd Author's Affiliation |
DENSO CORPORATION (DENSO CORP.) |
3rd Author's Name |
Mitsuo Sakashita |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Takashi Kanemura |
4th Author's Affiliation |
DENSO CORPORATION (DENSO CORP.) |
5th Author's Name |
Osamu Nakatsuka |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
6th Author's Name |
Shigeaki Zaima |
6th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2015-06-19 11:30:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2015-43 |
Volume (vol) |
vol.115 |
Number (no) |
no.108 |
Page |
pp.27-30 |
#Pages |
4 |
Date of Issue |
2015-06-12 (SDM) |