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Paper Abstract and Keywords
Presentation 2015-06-19 15:50
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52
Abstract (in Japanese) (See Japanese page) 
(in English) a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Panel (SoP) technology. These devices were studied in order to reveal the operation mechanism. Local heat produced by an electrical path inside the memory was detected and imaged by the novel method “Thermal Analysis”. It turned out that the visualized heat spots were conductive filaments (CFs) formed between interlayers of Pt/a-IGZO. This method indicated that there was a lot of emitted heat when the memory cell was switched off. It is thought to be accumulated heat causing the disruption of CFs.
Keyword (in Japanese) (See Japanese page) 
(in English) Thermal analysis / InGaZnO / Resistive switching / ReRAM / Conductive filament / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 108, SDM2015-52, pp. 75-80, June 2015.
Paper # SDM2015-52 
Date of Issue 2015-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-06-19 - 2015-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2015-06-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process 
Sub Title (in English)  
Keyword(1) Thermal analysis  
Keyword(2) InGaZnO  
Keyword(3) Resistive switching  
Keyword(4) ReRAM  
Keyword(5) Conductive filament  
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Keyword(7)  
Keyword(8)  
1st Author's Name Keisuke Kado  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Mutsunori Uenuma  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Kyouhei Nabesaka  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Kriti Sharma  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Haruka Yamazaki  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Satoshi Urakawa  
6th Author's Affiliation Nara Institute of Science and Technology (NAIST)
7th Author's Name Mami Fujii  
7th Author's Affiliation Nara Institute of Science and Technology (NAIST)
8th Author's Name Yasuaki Ishikawa  
8th Author's Affiliation Nara Institute of Science and Technology (NAIST)
9th Author's Name Yukiharu Uraoka  
9th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2015-06-19 15:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2015-52 
Volume (vol) vol.115 
Number (no) no.108 
Page pp.75-80 
#Pages 6 
Date of Issue 2015-06-12 (SDM) 

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