Paper Abstract and Keywords |
Presentation |
2015-06-19 15:50
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 Link to ES Tech. Rep. Archives: SDM2015-52 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Panel (SoP) technology. These devices were studied in order to reveal the operation mechanism. Local heat produced by an electrical path inside the memory was detected and imaged by the novel method “Thermal Analysis”. It turned out that the visualized heat spots were conductive filaments (CFs) formed between interlayers of Pt/a-IGZO. This method indicated that there was a lot of emitted heat when the memory cell was switched off. It is thought to be accumulated heat causing the disruption of CFs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Thermal analysis / InGaZnO / Resistive switching / ReRAM / Conductive filament / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 108, SDM2015-52, pp. 75-80, June 2015. |
Paper # |
SDM2015-52 |
Date of Issue |
2015-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2015-52 Link to ES Tech. Rep. Archives: SDM2015-52 |