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Paper Abstract and Keywords
Presentation 2015-07-25 11:05
Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer
Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) ED2015-45
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) structure, which was grown on a (100) GaAs substrate by molecular beam epitaxy. We achieved high electron mobility in the InSb QW structure using an Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer and realized reduced compressive strain and improved surface roughness. In addition, we investigated the dependence of the Al0.25In0.75Sb layer thickness in the Al0.25In0.75Sb/ Al0.15In0.85Sb stepped buffer layer on the electron mobility characteristics. We only obtained increased electron mobility using the Al0.25In0.75Sb layer within a critical thickness range.
Keyword (in Japanese) (See Japanese page) 
(in English) MBE / InSb / HEMT / AlInSb / GaAs / electron mobility / effective mass / strain  
Reference Info. IEICE Tech. Rep., vol. 115, no. 156, ED2015-45, pp. 45-49, July 2015.
Paper # ED2015-45 
Date of Issue 2015-07-17 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-45

Conference Information
Committee ED  
Conference Date 2015-07-24 - 2015-07-25 
Place (in Japanese) (See Japanese page) 
Place (in English) IT Business Plaza Musashi 5F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Processes and Devices 
Paper Information
Registration To ED 
Conference Code 2015-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer 
Sub Title (in English)  
Keyword(1) MBE  
Keyword(2) InSb  
Keyword(3) HEMT  
Keyword(4) AlInSb  
Keyword(5) GaAs  
Keyword(6) electron mobility  
Keyword(7) effective mass  
Keyword(8) strain  
1st Author's Name Tatsuya Taketsuru  
1st Author's Affiliation Tokyo University of Science (TUS)
2nd Author's Name Sachie Fujikawa  
2nd Author's Affiliation Tokyo University of Science (TUS)
3rd Author's Name Yoshiaki Harada  
3rd Author's Affiliation Tokyo University of Science (TUS)
4th Author's Name Hiroki Suzuki  
4th Author's Affiliation Tokyo University of Science (TUS)
5th Author's Name Kyousuke Isono  
5th Author's Affiliation Tokyo University of Science (TUS)
6th Author's Name Sanshiro Kato  
6th Author's Affiliation Tokyo University of Science (TUS)
7th Author's Name Daisuke Tuji  
7th Author's Affiliation Tokyo University of Science (TUS)
8th Author's Name Hiroki I. Fujishiro  
8th Author's Affiliation Tokyo University of Science (TUS)
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Speaker Author-1 
Date Time 2015-07-25 11:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-45 
Volume (vol) vol.115 
Number (no) no.156 
Page pp.45-49 
#Pages 5 
Date of Issue 2015-07-17 (ED) 

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