Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2015-08-27 11:00
Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo (NAIST), Eiji Takahashi, Yasunori Andoh (Nissin Electric), Yukiharu Uraoka (NAIST) R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32
Abstract (in Japanese) (See Japanese page) 
(in English) Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as peripheral circuits for displays. However, achieving highly reliable a-IGZO TFTs continues to be a serious challenge. We propose a-IGZO TFTs with a fluorinated silicon nitride (SiNx:F) gate insulator (GI) which showed good reliability against positive bias temperature stress (PBTS) compared with those with thermally oxidized SiO2 GIs. From the result of X-ray photoelectron spectroscopy analysis, the fluorine in SiNx:F formed a bonding state with indium at the interface between SiNx:F and a-IGZO. Here we report a reliability-improvement mechanism using SiNx:F GIs.
Keyword (in Japanese) (See Japanese page) 
(in English) thin-film transistor / a-IGZO / gate insulator / reliability / fluorine / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 194, R2015-24, pp. 9-11, Aug. 2015.
Paper # R2015-24 
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2015-24 EMD2015-32 CPM2015-48 OPE2015-63 LQE2015-32

Conference Information
Committee CPM OPE LQE R EMD  
Conference Date 2015-08-27 - 2015-08-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Aomori-Bussankan-Asupamu 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To R 
Conference Code 2015-08-CPM-OPE-LQE-R-EMD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator 
Sub Title (in English)  
Keyword(1) thin-film transistor  
Keyword(2) a-IGZO  
Keyword(3) gate insulator  
Keyword(4) reliability  
Keyword(5) fluorine  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Haruka Yamazaki  
1st Author's Affiliation Nara institute of science and technology (NAIST)
2nd Author's Name Yasuaki Ishikawa  
2nd Author's Affiliation Nara institute of science and technology (NAIST)
3rd Author's Name Mami Fujii  
3rd Author's Affiliation Nara institute of science and technology (NAIST)
4th Author's Name Juan Paolo Bermundo  
4th Author's Affiliation Nara institute of science and technology (NAIST)
5th Author's Name Eiji Takahashi  
5th Author's Affiliation Nissin Electric Co.,Ltd (Nissin Electric)
6th Author's Name Yasunori Andoh  
6th Author's Affiliation Nissin Electric Co.,Ltd (Nissin Electric)
7th Author's Name Yukiharu Uraoka  
7th Author's Affiliation Nara institute of science and technology (NAIST)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2015-08-27 11:00:00 
Presentation Time 25 minutes 
Registration for R 
Paper # R2015-24, EMD2015-32, CPM2015-48, OPE2015-63, LQE2015-32 
Volume (vol) vol.115 
Number (no) no.194(R), no.195(EMD), no.196(CPM), no.197(OPE), no.198(LQE) 
Page pp.9-11 
#Pages 3 
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan