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| Presentation | 2015-10-29 14:50 A study on Si surface flattening process by annealing Ar/H2ambient Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech)  SDM2015-72 Link to ES Tech. Rep. Archives: SDM2015-72 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar ambient. In this study, Si substrates were annealed under Ar/(0 - 4%)H2 ambient to investigate Si surface flattening process utilizing the furnace with ultra-pure quartz tubes by changing ambient gas and annealing temperature. The thickness of unintentionally formed SiO2 by 1000°C/5 min annealing was decreased from 3.0 nm to 1.3 nm by changing ambient gas from Ar to Ar/4%H2. Furthermore, atomically flat surface was obtained by 1050°C/30 min annealing in Ar/4%H2 ambient. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si / flattening process / atomically flat / annealing / Ar/H2 / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 280, SDM2015-72, pp. 7-12, Oct. 2015. | |
| Paper # | SDM2015-72 | |
| Date of Issue | 2015-10-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2015-72 Link to ES Tech. Rep. Archives: SDM2015-72 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2015-10-29 - 2015-10-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2015-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study on Si surface flattening process by annealing Ar/H2ambient |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | flattening process |
| Keyword(3) | atomically flat |
| Keyword(4) | annealing |
| Keyword(5) | Ar/H2 |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Sohya Kudoh |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Shun-ichiro Ohmi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
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| Speaker | Author-1 |
| Date Time | 2015-10-29 14:50:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2015-72 |
| Volume (vol) | vol.115 |
| Number (no) | no.280 |
| Page | pp.7-12 |
| #Pages | 6 |
| Date of Issue | 2015-10-22 (SDM) |
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