Paper Abstract and Keywords |
Presentation |
2015-10-30 09:30
[Invited Talk]
Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC) SDM2015-76 Link to ES Tech. Rep. Archives: SDM2015-76 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Conformal plasma doping for topographic structures was achieved using microwave plasmas with low temperature annealing. To verify the same Arsenic concentration was present at the top and side Fin structure surfaces, Arsenic concentrations were measured precisely by TEM and SEM EDX for both plasma doping and subsequent annealing steps. The unique ability of the RLSATM plasma source to operate at high density and generating a lot of reactive ions allow accessing the lower kinetic ion energy regime needed for damage free dopant incorporation in topographic structures. It is also tightly relevant with oxygen and Si atoms for the conformal doping formation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Plasma Doping / Conformal Doping / Arsenic doping / Fin FET / Si process / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 280, SDM2015-76, pp. 29-33, Oct. 2015. |
Paper # |
SDM2015-76 |
Date of Issue |
2015-10-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-76 Link to ES Tech. Rep. Archives: SDM2015-76 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-10-29 - 2015-10-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures |
Sub Title (in English) |
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Keyword(1) |
Plasma Doping |
Keyword(2) |
Conformal Doping |
Keyword(3) |
Arsenic doping |
Keyword(4) |
Fin FET |
Keyword(5) |
Si process |
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1st Author's Name |
Hirokazu Ueda |
1st Author's Affiliation |
Tokyo Electron, Ltd. (TEL TDC) |
2nd Author's Name |
Peter Ventzek |
2nd Author's Affiliation |
Tokyo Electron America, Inc. (TEL America) |
3rd Author's Name |
Masahiro Oka |
3rd Author's Affiliation |
Tokyo Electron, Ltd. (TEL TDC) |
4th Author's Name |
Yuuki Kobayashi |
4th Author's Affiliation |
Tokyo Electron, Ltd. (TEL TDC) |
5th Author's Name |
Yasuhiro Sugimoto |
5th Author's Affiliation |
Tokyo Electron, Ltd. (TEL TDC) |
6th Author's Name |
Satoru Kawakami |
6th Author's Affiliation |
Tokyo Electron, Ltd. (TEL TDC) |
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Speaker |
Author-1 |
Date Time |
2015-10-30 09:30:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2015-76 |
Volume (vol) |
vol.115 |
Number (no) |
no.280 |
Page |
pp.29-33 |
#Pages |
5 |
Date of Issue |
2015-10-22 (SDM) |
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