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Paper Abstract and Keywords
Presentation 2015-10-30 09:30
[Invited Talk] Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures
Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC) SDM2015-76 Link to ES Tech. Rep. Archives: SDM2015-76
Abstract (in Japanese) (See Japanese page) 
(in English) Conformal plasma doping for topographic structures was achieved using microwave plasmas with low temperature annealing. To verify the same Arsenic concentration was present at the top and side Fin structure surfaces, Arsenic concentrations were measured precisely by TEM and SEM EDX for both plasma doping and subsequent annealing steps. The unique ability of the RLSATM plasma source to operate at high density and generating a lot of reactive ions allow accessing the lower kinetic ion energy regime needed for damage free dopant incorporation in topographic structures. It is also tightly relevant with oxygen and Si atoms for the conformal doping formation.
Keyword (in Japanese) (See Japanese page) 
(in English) Plasma Doping / Conformal Doping / Arsenic doping / Fin FET / Si process / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 280, SDM2015-76, pp. 29-33, Oct. 2015.
Paper # SDM2015-76 
Date of Issue 2015-10-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2015-10-29 - 2015-10-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2015-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures 
Sub Title (in English)  
Keyword(1) Plasma Doping  
Keyword(2) Conformal Doping  
Keyword(3) Arsenic doping  
Keyword(4) Fin FET  
Keyword(5) Si process  
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1st Author's Name Hirokazu Ueda  
1st Author's Affiliation Tokyo Electron, Ltd. (TEL TDC)
2nd Author's Name Peter Ventzek  
2nd Author's Affiliation Tokyo Electron America, Inc. (TEL America)
3rd Author's Name Masahiro Oka  
3rd Author's Affiliation Tokyo Electron, Ltd. (TEL TDC)
4th Author's Name Yuuki Kobayashi  
4th Author's Affiliation Tokyo Electron, Ltd. (TEL TDC)
5th Author's Name Yasuhiro Sugimoto  
5th Author's Affiliation Tokyo Electron, Ltd. (TEL TDC)
6th Author's Name Satoru Kawakami  
6th Author's Affiliation Tokyo Electron, Ltd. (TEL TDC)
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Speaker Author-1 
Date Time 2015-10-30 09:30:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2015-76 
Volume (vol) vol.115 
Number (no) no.280 
Page pp.29-33 
#Pages
Date of Issue 2015-10-22 (SDM) 


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