Paper Abstract and Keywords |
Presentation |
2015-10-30 13:50
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.) SDM2015-80 Link to ES Tech. Rep. Archives: SDM2015-80 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The grain growth of pentacene thin film, which is well known as p-type organic semiconductor, is sensitive for underneath material and deposition temperature. Furthermore, high-k materials are necessary to introduce as gate insulator to decrease the operation voltage as well as Si devices. It was found that pentacene film deposited at 100oC showed large grain growth on HfO2 bottom gate insulator. Furthermore, the device characteristics of OFET with the pentacene film were investigated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
HfO2 / pentacene / high temperature deposition / surface morphology / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 280, SDM2015-80, pp. 49-52, Oct. 2015. |
Paper # |
SDM2015-80 |
Date of Issue |
2015-10-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2015-80 Link to ES Tech. Rep. Archives: SDM2015-80 |
Conference Information |
Committee |
SDM |
Conference Date |
2015-10-29 - 2015-10-30 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2015-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator |
Sub Title (in English) |
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HfO2 |
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pentacene |
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high temperature deposition |
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surface morphology |
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1st Author's Name |
Yasutaka Maeda |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
2nd Author's Name |
Yeyuan Liu |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech.) |
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Shun-ichiro Ohmi |
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Tokyo Institute of Technology (Tokyo Tech.) |
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Speaker |
Author-1 |
Date Time |
2015-10-30 13:50:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2015-80 |
Volume (vol) |
vol.115 |
Number (no) |
no.280 |
Page |
pp.49-52 |
#Pages |
4 |
Date of Issue |
2015-10-22 (SDM) |
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