Paper Abstract and Keywords |
Presentation |
2015-11-26 15:55
Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) ED2015-78 CPM2015-113 LQE2015-110 Link to ES Tech. Rep. Archives: ED2015-78 CPM2015-113 LQE2015-110 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. The results show that the conventional method cannot give accurate IQE values for low-quality samples although it can be valid for high-quality samples, and that our method can always give accurate values. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Photo-acoustic / Internal quantum efficiency / temperature dependence of photoluminescence intensity / Non-radiative recombination / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 331, LQE2015-110, pp. 53-58, Nov. 2015. |
Paper # |
LQE2015-110 |
Date of Issue |
2015-11-19 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2015-78 CPM2015-113 LQE2015-110 Link to ES Tech. Rep. Archives: ED2015-78 CPM2015-113 LQE2015-110 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2015-11-26 - 2015-11-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Osaka City University Media Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2015-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals |
Sub Title (in English) |
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Keyword(1) |
GaN |
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Photo-acoustic |
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Internal quantum efficiency |
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temperature dependence of photoluminescence intensity |
Keyword(5) |
Non-radiative recombination |
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1st Author's Name |
Takashi Nakano |
1st Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
2nd Author's Name |
Kouhei Kawakami |
2nd Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
3rd Author's Name |
Atsushi A. Yamaguchi |
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Kanazawa Institute of Technology (KIT) |
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Speaker |
Author-1 |
Date Time |
2015-11-26 15:55:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2015-78, CPM2015-113, LQE2015-110 |
Volume (vol) |
vol.115 |
Number (no) |
no.329(ED), no.330(CPM), no.331(LQE) |
Page |
pp.53-58 |
#Pages |
6 |
Date of Issue |
2015-11-19 (ED, CPM, LQE) |
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