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Paper Abstract and Keywords
Presentation 2015-11-26 15:30
Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements
Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi (KIT) ED2015-77 CPM2015-112 LQE2015-109
Abstract (in Japanese) (See Japanese page) 
(in English) Radiative and non-radiative recombination lifetimes in III-nitride semiconductors are usually estimated from time-resolved and temperature-dependent photoluminescence (PL) measurements by assuming that internal quantum efficiency (IQE) at cryogenic temperature is unity. In our recent study, we found that the assumption is not necessarily valid, from simultaneous measurements of PL and photo-acoustic (PA) signals. In this study, we estimate accurate lifetimes from the reliable IQE values estimated by the simultaneous PL/PA measurements, and it is found that radiative lifetime in GaN increases in proportion to the 1.5th power of temperature and that non-radiative lifetime shows little temperature dependence although the non-radiative lifetime itself largely depends on sample quality.
Keyword (in Japanese) (See Japanese page) 
(in English) Nitride Semiconductor / GaN / IQE / Recombination lifetime / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 331, LQE2015-109, pp. 49-52, Nov. 2015.
Paper # LQE2015-109 
Date of Issue 2015-11-19 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-77 CPM2015-112 LQE2015-109

Conference Information
Committee ED LQE CPM  
Conference Date 2015-11-26 - 2015-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University Media Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2015-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements 
Sub Title (in English)  
Keyword(1) Nitride Semiconductor  
Keyword(2) GaN  
Keyword(3) IQE  
Keyword(4) Recombination lifetime  
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1st Author's Name Kohei Kawakami  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Takashi Nakano  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Atsushi A Yamaguchi  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
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Speaker Author-1 
Date Time 2015-11-26 15:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2015-77, CPM2015-112, LQE2015-109 
Volume (vol) vol.115 
Number (no) no.329(ED), no.330(CPM), no.331(LQE) 
Page pp.49-52 
#Pages 4 
Date of Issue 2015-11-19 (ED, CPM, LQE) 

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