Paper Abstract and Keywords |
Presentation |
2015-12-14 13:45
Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 Link to ES Tech. Rep. Archives: EID2015-15 SDM2015-98 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and poly-Si due to their high field effect mobility even in the amorphous state with high optical transmittance in the visible range. In this study, among the components contained in the InGaZnO4 (IGZO), In2O3 was deposited and evaluated for the possible cause of high field effect mobility. Optical transmittance and sheet resistance of In2O3 thin film were evaluated and applied for thin film transistor. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
RF magnetron sputtering / Oxide semiconductor / InGaZnO4 (IGZO) / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 115, no. 362, EID2015-15, pp. 27-30, Dec. 2015. |
Paper # |
EID2015-15 |
Date of Issue |
2015-12-07 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EID2015-15 SDM2015-98 Link to ES Tech. Rep. Archives: EID2015-15 SDM2015-98 |
Conference Information |
Committee |
EID SDM |
Conference Date |
2015-12-14 - 2015-12-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Ryukoku University, Avanti Kyoto Hall |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Si and Si-related Materials and Devices, and Display Technology |
Paper Information |
Registration To |
EID |
Conference Code |
2015-12-EID-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of In2O3 film deposited by RF magnetron sputtering |
Sub Title (in English) |
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Keyword(1) |
RF magnetron sputtering |
Keyword(2) |
Oxide semiconductor |
Keyword(3) |
InGaZnO4 (IGZO) |
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1st Author's Name |
Toshihiro Yoshioka |
1st Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
2nd Author's Name |
Junji Ogawa |
2nd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
3rd Author's Name |
Masahiro Yuge |
3rd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
4th Author's Name |
Tokiyoshi Matsuda |
4th Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
5th Author's Name |
Mutsumi Kimura |
5th Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2015-12-14 13:45:00 |
Presentation Time |
15 minutes |
Registration for |
EID |
Paper # |
EID2015-15, SDM2015-98 |
Volume (vol) |
vol.115 |
Number (no) |
no.362(EID), no.363(SDM) |
Page |
pp.27-30 |
#Pages |
4 |
Date of Issue |
2015-12-07 (EID, SDM) |
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