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Paper Abstract and Keywords
Presentation 2015-12-14 15:15
Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor
Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103
Abstract (in Japanese) (See Japanese page) 
(in English) Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film transistor (TFT). Thin films of SnO2 / Al2O3 were deposited by RF magnetron sputtering, and those sheet resistance and optical transmittance were evaluated. Optical transmittances with SnO2 / Al2O3 thin film were higher than 80% in visible range, therefore SnO2 / Al2O3 thin film were transparent. SnO2 / Al2O3 thin film transistor were fabricated on Si wafer. We found the operation of SnO2 / Al2O3 thin film transistor.
Keyword (in Japanese) (See Japanese page) 
(in English) RF magnetron sputtering / SnO2 / Al2O3(ATO) thin film / oxide semiconductor / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 362, EID2015-20, pp. 49-52, Dec. 2015.
Paper # EID2015-20 
Date of Issue 2015-12-07 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2015-20 SDM2015-103

Conference Information
Committee EID SDM  
Conference Date 2015-12-14 - 2015-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Ryukoku University, Avanti Kyoto Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, and Display Technology 
Paper Information
Registration To EID 
Conference Code 2015-12-EID-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor 
Sub Title (in English)  
Keyword(1) RF magnetron sputtering  
Keyword(2) SnO2 / Al2O3(ATO) thin film  
Keyword(3) oxide semiconductor  
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1st Author's Name Junji Ogawa  
1st Author's Affiliation Ryukoku University (Ryukoku Univ)
2nd Author's Name Masahiro Yuge  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ)
3rd Author's Name Tosihiro Yosioka  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ)
4th Author's Name Tokiyosi Matsuda  
4th Author's Affiliation Ryukoku University (Ryukoku Univ)
5th Author's Name Mutsumi Kimura  
5th Author's Affiliation Ryukoku University (Ryukoku Univ)
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Speaker Author-1 
Date Time 2015-12-14 15:15:00 
Presentation Time 15 minutes 
Registration for EID 
Paper # EID2015-20, SDM2015-103 
Volume (vol) vol.115 
Number (no) no.362(EID), no.363(SDM) 
Page pp.49-52 
#Pages 4 
Date of Issue 2015-12-07 (EID, SDM) 

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