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Paper Abstract and Keywords
Presentation 2015-12-14 14:00
Characterization of GaxSn1-xO thin film by the mist CVD method
Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-16 SDM2015-99
Abstract (in Japanese) (See Japanese page) 
(in English) Thin films of GaxSn1-xO (GTO) for an active layer of thin film transistor (TFT) were deposited with different substrate temperature and deposition time on glass substrates by the mist CVD method with non-vacuum process. Optical transmittances of GTO thin film were higher than 80% for all deposition time. Sheet resistances of GTO thin films were decreased deposited at 450℃, and 500℃ with longer deposition time. Relationships between the sheet resistance and deposition time were not inverse proportion.
Keyword (in Japanese) (See Japanese page) 
(in English) Oxide semiconductor / GaSnO thin film / mist CVD / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 362, EID2015-16, pp. 31-34, Dec. 2015.
Paper # EID2015-16 
Date of Issue 2015-12-07 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2015-16 SDM2015-99

Conference Information
Committee EID SDM  
Conference Date 2015-12-14 - 2015-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Ryukoku University, Avanti Kyoto Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si and Si-related Materials and Devices, and Display Technology 
Paper Information
Registration To EID 
Conference Code 2015-12-EID-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of GaxSn1-xO thin film by the mist CVD method 
Sub Title (in English)  
Keyword(1) Oxide semiconductor  
Keyword(2) GaSnO thin film  
Keyword(3) mist CVD  
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1st Author's Name Masahiro Yuge  
1st Author's Affiliation Ryukoku University (Ryukoku Univ)
2nd Author's Name Junji Ogawa  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ)
3rd Author's Name Tosihiro Yosioka  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ)
4th Author's Name Yuta Kato  
4th Author's Affiliation Ryukoku University (Ryukoku Univ)
5th Author's Name Tokiyosi Matsuda  
5th Author's Affiliation Ryukoku University (Ryukoku Univ)
6th Author's Name Mutsumi Kimura  
6th Author's Affiliation Ryukoku University (Ryukoku Univ)
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Speaker Author-1 
Date Time 2015-12-14 14:00:00 
Presentation Time 15 minutes 
Registration for EID 
Paper # EID2015-16, SDM2015-99 
Volume (vol) vol.115 
Number (no) no.362(EID), no.363(SDM) 
Page pp.31-34 
#Pages 4 
Date of Issue 2015-12-07 (EID, SDM) 

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