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Paper Abstract and Keywords
Presentation 2015-12-17 16:00
[Poster Presentation] Error Tendency Analysis in NAND Flash Memory
Yoshio Nakamura, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.) ICD2015-76 CPSY2015-89
Abstract (in Japanese) (See Japanese page) 
(in English) Program-disturb and data-retention degrade the reliability of NAND flash memory. During program-disturb, VTH of the memory cell is increased by electron injection into floating gate incorrectly. On the other hand, during data-retention, VTH of the memory cell is decreased by electron ejection from floating gate. These errors depend on the condition of tunnel oxide between floating gate and channel. Since the condition of tunnel oxide is changed by variation on manufacture, each memory cell has different error tendency. In this paper, tendency of program-disturb and data-retention errors are evaluated for enhancement of reliability in NAND flash memory.
Keyword (in Japanese) (See Japanese page) 
(in English) solid-state-drive / NAND flash memory / reliability / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 373, ICD2015-76, pp. 51-51, Dec. 2015.
Paper # ICD2015-76 
Date of Issue 2015-12-10 (ICD, CPSY) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2015-76 CPSY2015-89

Conference Information
Committee ICD CPSY  
Conference Date 2015-12-17 - 2015-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2015-12-ICD-CPSY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Error Tendency Analysis in NAND Flash Memory 
Sub Title (in English)  
Keyword(1) solid-state-drive  
Keyword(2) NAND flash memory  
Keyword(3) reliability  
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1st Author's Name Yoshio Nakamura  
1st Author's Affiliation Chuo University (Chuo Univ.)
2nd Author's Name Tomoko Ogura Iwasaki  
2nd Author's Affiliation Chuo University (Chuo Univ.)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ.)
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Speaker Author-1 
Date Time 2015-12-17 16:00:00 
Presentation Time 100 minutes 
Registration for ICD 
Paper # ICD2015-76, CPSY2015-89 
Volume (vol) vol.115 
Number (no) no.373(ICD), no.374(CPSY) 
Page p.51 
#Pages 1 
Date of Issue 2015-12-10 (ICD, CPSY) 

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