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| Presentation | 2016-01-20 13:55 [Invited Lecture] Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model -- Comparison of semiconductor materials -- Toshiyuki Oishi, Makoto Kasu (Saga Univ.)  ED2015-116 Link to ES Tech. Rep. Archives: ED2015-116 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | RF-DC conversion efficiencies of rectenna using conventional and wide bandgap semiconductors are estimated by small signal equivalent circuit model combined circuit parameters with material parameters. We calculated the RF-DC conversion efficiencies by using parasitic resistances and capacitances estimated from the material parameters. The wide bandgap semiconductors are superior in the RF-DC conversion efficiencies at high operation voltage. Especially, Diamond has the large efficiency of 98 % at the high operation voltage of 150 V and small degradation of efficiency at the higher operation voltages. This properties result from small loss in the on state condition, which is introduced from small on resistances. On the other hand, the parasitic capacitances for the wide bandgap semiconductors are larger than that for the conventional semiconductors such as Si and GaAs. The effect of the decrease of the on resistances overcomes the negative effect of increase of the parasitic capacitances. Therefore, the RF-DC conversion efficiencies expect to improve by adopting the wide bandgap semiconductors, especially diamond. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | wide bandgap semiconductor / RF-DC conversion efficiency / small equivalent circuit model / diamond / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 402, ED2015-116, pp. 25-29, Jan. 2016. | |
| Paper # | ED2015-116 | |
| Date of Issue | 2016-01-13 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2015-116 Link to ES Tech. Rep. Archives: ED2015-116 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2016-01-20 - 2016-01-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Power Devices and High-frequency Devices, Microwave, etc. |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-01-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model |
| Sub Title (in English) | Comparison of semiconductor materials |
| Keyword(1) | wide bandgap semiconductor |
| Keyword(2) | RF-DC conversion efficiency |
| Keyword(3) | small equivalent circuit model |
| Keyword(4) | diamond |
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| 1st Author's Name | Toshiyuki Oishi |
| 1st Author's Affiliation | Saga University (Saga Univ.) |
| 2nd Author's Name | Makoto Kasu |
| 2nd Author's Affiliation | Saga University (Saga Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-01-20 13:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2015-116 |
| Volume (vol) | vol.115 |
| Number (no) | no.402 |
| Page | pp.25-29 |
| #Pages | 5 |
| Date of Issue | 2016-01-13 (ED) |
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