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Paper Abstract and Keywords
Presentation 2016-01-20 13:55
[Invited Lecture] Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model -- Comparison of semiconductor materials --
Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-116
Abstract (in Japanese) (See Japanese page) 
(in English) RF-DC conversion efficiencies of rectenna using conventional and wide bandgap semiconductors are estimated by small signal equivalent circuit model combined circuit parameters with material parameters. We calculated the RF-DC conversion efficiencies by using parasitic resistances and capacitances estimated from the material parameters. The wide bandgap semiconductors are superior in the RF-DC conversion efficiencies at high operation voltage. Especially, Diamond has the large efficiency of 98 % at the high operation voltage of 150 V and small degradation of efficiency at the higher operation voltages. This properties result from small loss in the on state condition, which is introduced from small on resistances. On the other hand, the parasitic capacitances for the wide bandgap semiconductors are larger than that for the conventional semiconductors such as Si and GaAs. The effect of the decrease of the on resistances overcomes the negative effect of increase of the parasitic capacitances. Therefore, the RF-DC conversion efficiencies expect to improve by adopting the wide bandgap semiconductors, especially diamond.
Keyword (in Japanese) (See Japanese page) 
(in English) wide bandgap semiconductor / RF-DC conversion efficiency / small equivalent circuit model / diamond / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 402, ED2015-116, pp. 25-29, Jan. 2016.
Paper # ED2015-116 
Date of Issue 2016-01-13 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-116

Conference Information
Committee ED  
Conference Date 2016-01-20 - 2016-01-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc. 
Paper Information
Registration To ED 
Conference Code 2016-01-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model 
Sub Title (in English) Comparison of semiconductor materials 
Keyword(1) wide bandgap semiconductor  
Keyword(2) RF-DC conversion efficiency  
Keyword(3) small equivalent circuit model  
Keyword(4) diamond  
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1st Author's Name Toshiyuki Oishi  
1st Author's Affiliation Saga University (Saga Univ.)
2nd Author's Name Makoto Kasu  
2nd Author's Affiliation Saga University (Saga Univ.)
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Speaker Author-1 
Date Time 2016-01-20 13:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-116 
Volume (vol) vol.115 
Number (no) no.402 
Page pp.25-29 
#Pages 5 
Date of Issue 2016-01-13 (ED) 

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