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Paper Abstract and Keywords
Presentation 2016-01-20 14:20
[Invited Lecture] GaN Schottky Barrier Diode and Microwave Power Transmission
Yasuo Ohno (LaS) ED2015-117
Abstract (in Japanese) (See Japanese page) 
(in English) GaN based electron devices have high potential for high frequency, high power applications, but applications with high impact has not yet appeared. Meanwhile, attention has been paid on wireless power transmission for battery charging of mobile equipment and electric vehicles. The frequencies they will use are ranging from kHz to GHz. GaN based devices will be suitable for such applications, especially with microwave. In this article, electron devices for microwave power transmission will be explained including the performance and present status of Schottky barrier diode for microwave rectification will be explained.
Keyword (in Japanese) (See Japanese page) 
(in English) microwave / wireless power transmission / GaN / Schottky barrier diode / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 402, ED2015-117, pp. 31-35, Jan. 2016.
Paper # ED2015-117 
Date of Issue 2016-01-13 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2015-117

Conference Information
Committee ED  
Conference Date 2016-01-20 - 2016-01-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Power Devices and High-frequency Devices, Microwave, etc. 
Paper Information
Registration To ED 
Conference Code 2016-01-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN Schottky Barrier Diode and Microwave Power Transmission 
Sub Title (in English)  
Keyword(1) microwave  
Keyword(2) wireless power transmission  
Keyword(3) GaN  
Keyword(4) Schottky barrier diode  
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1st Author's Name Yasuo Ohno  
1st Author's Affiliation Laser Systems, Inc. (LaS)
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Speaker Author-1 
Date Time 2016-01-20 14:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2015-117 
Volume (vol) vol.115 
Number (no) no.402 
Page pp.31-35 
#Pages 5 
Date of Issue 2016-01-13 (ED) 

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