| Paper Abstract and Keywords |
| Presentation |
2016-01-28 11:00
[Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
(Not available yet) |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
p-type Tunnel FETs / NBTI / Activation Energy / Traps / Interface State / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 115, no. 440, SDM2015-122, pp. 9-12, Jan. 2016. |
| Paper # |
SDM2015-122 |
| Date of Issue |
2016-01-21 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
SDM2015-122 |