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| Presentation | 2016-01-28 10:55 Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech)  PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 Link to ES Tech. Rep. Archives: EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Since a long-wavelength transistor lasers（TL）has 3 electrical terminals, which are different from the conventional LDs, it allows to operate with several terminal configurations. In this paper, we observed output power control by the collector-base voltage VCB with common base configuration and suppression of the collector current increasing due to stimulated emission after the threshold current. We also obtained current gain β improvement by thinning the p-GaInAsP base layer thanks to suppression of carrier recombination in the p-GaInAsP base layer. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | semiconductor laser / high speed / buried heterostructure / transistor laser / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 433, LQE2015-138, pp. 21-26, Jan. 2016. | |
| Paper # | LQE2015-138 | |
| Date of Issue | 2016-01-21 (PN, EMT, OPE, LQE, EST, MWP) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 Link to ES Tech. Rep. Archives: EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 |
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| Conference Information | |
| Committee | LQE EST OPE EMT PN MWP IEE-EMT PEM |
| Conference Date | 2016-01-28 - 2016-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2016-01-LQE-EST-OPE-EMT-PN-MWP-EMT-PEM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure |
| Sub Title (in English) | |
| Keyword(1) | semiconductor laser |
| Keyword(2) | high speed |
| Keyword(3) | buried heterostructure |
| Keyword(4) | transistor laser |
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| 1st Author's Name | Shotaro Tadano |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Takaaki Kaneko |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 3rd Author's Name | Kentaro Yamanaka |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 4th Author's Name | Nobuhiko Nishiyama |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 5th Author's Name | Shigehisa Arai |
| 5th Author's Affiliation | QNERC, Tokyo Institute of Technology (Tokyo Tech) |
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| Speaker | Author-1 |
| Date Time | 2016-01-28 10:55:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | PN2015-38, EMT2015-89, OPE2015-151, LQE2015-138, EST2015-95, MWP2015-64 |
| Volume (vol) | vol.115 |
| Number (no) | no.430(PN), no.431(EMT), no.432(OPE), no.433(LQE), no.434(EST), no.435(MWP) |
| Page | pp.21-26 |
| #Pages | 6 |
| Date of Issue | 2016-01-21 (PN, EMT, OPE, LQE, EST, MWP) |
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