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| Presentation | 2016-01-28 15:50 [Invited Talk] Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage Jiro Ida (Kanazawa Institute of Technology)  SDM2015-127 Link to ES Tech. Rep. Archives: SDM2015-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have proposed the new type super steep subthreshold slope (SS) device of the PN-body tied SOI FET. The N region is inserted on the body tied region of the SOI FET. The hole are intended to inject to the body of the SOI by the PNP bipolar transistor, which start the floating body effect and result in the appearance of the super steep SS. It was confirmed that the super steep SS appears at the ultralow drain voltage of 0.1V at 3 decades of the drain current. It was also confirmed that the device has the good Id-Vd characteristics and the negligible hysteresis characteristics. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Steep subthreshold slope / SOI FET / Floating Body Effect / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 115, no. 440, SDM2015-127, pp. 31-34, Jan. 2016. | |
| Paper # | SDM2015-127 | |
| Date of Issue | 2016-01-21 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2015-127 Link to ES Tech. Rep. Archives: SDM2015-127 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-01-28 - 2016-01-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Super Steep Subthreshold Slope PN-Body Tied SOI FET with Ultra Low Drain Voltage |
| Sub Title (in English) | |
| Keyword(1) | Steep subthreshold slope |
| Keyword(2) | SOI FET |
| Keyword(3) | Floating Body Effect |
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| 1st Author's Name | Jiro Ida |
| 1st Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Institute of Technology) |
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| Speaker | Author-1 |
| Date Time | 2016-01-28 15:50:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2015-127 |
| Volume (vol) | vol.115 |
| Number (no) | no.440 |
| Page | pp.31-34 |
| #Pages | 4 |
| Date of Issue | 2016-01-21 (SDM) |
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