Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-03-01 17:05
Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control
Yusuke Yoshida, Masaru Kudo, Kimiyoshi Usami (SIT) VLD2015-130
Abstract (in Japanese) (See Japanese page) 
(in English) In recent years, energy harvesting and sensor node have attracted a lot of attention. Therefore, a memory which can reduce power consumption and realizes ultra-low voltage operation is required. However, it is especially difficult for the conventional SRAM to operate at ultra-low voltage. This paper describes a design of low-power and ultra-low voltage operation Standard Cell Memory (SCM) using Silicon-on-Thin-BOX (SOTB). SOTB is one of the FD-SOI devices. We investigated the memory which can operate low-power consumption and ultra-low voltage operation by performing a body bias control.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon-on-Thin-BOX / Body Bias / Standard Cell Memory / / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 465, VLD2015-130, pp. 111-116, Feb. 2016.
Paper # VLD2015-130 
Date of Issue 2016-02-22 (VLD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2015-130

Conference Information
Committee VLD  
Conference Date 2016-02-29 - 2016-03-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To VLD 
Conference Code 2016-02-VLD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control 
Sub Title (in English)  
Keyword(1) Silicon-on-Thin-BOX  
Keyword(2) Body Bias  
Keyword(3) Standard Cell Memory  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Yoshida  
1st Author's Affiliation Shibaura Institute of Technology (SIT)
2nd Author's Name Masaru Kudo  
2nd Author's Affiliation Shibaura Institute of Technology (SIT)
3rd Author's Name Kimiyoshi Usami  
3rd Author's Affiliation Shibaura Institute of Technology (SIT)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2016-03-01 17:05:00 
Presentation Time 25 minutes 
Registration for VLD 
Paper # VLD2015-130 
Volume (vol) vol.115 
Number (no) no.465 
Page pp.111-116 
#Pages 6 
Date of Issue 2016-02-22 (VLD) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan