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Paper Abstract and Keywords
Presentation 2016-03-08 09:50
Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes
Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87
Abstract (in Japanese) (See Japanese page) 
(in English) We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the breakdown voltage. We used unpackaged diodes with AlN submounts to make heat radiation characteristics better. In simulations, the RF-DC conversion efficiency of 71% was obtained at 20 W of the input power. In experiments, the RF-DC conversion efficiency of 40% was achieved at 20 W of the input power. Next, the line length of diode matching was investigated as the cause of difference between simulations and experiments. As a simulation results, RF-DC conversion efficiency was changed with a cycle of quarter wave length. Finally, rectifiers were experimented with changing the line length. As a results, the RF-DC conversion efficiency of 45% was achieved at 20 W of the input power.
Keyword (in Japanese) (See Japanese page) 
(in English) microwave power transfer / high power / rectifier / GaN schottky barrier diode / / / /  
Reference Info. IEICE Tech. Rep., vol. 115, no. 498, WPT2015-87, pp. 61-65, March 2016.
Paper # WPT2015-87 
Date of Issue 2016-02-29 (WPT) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee WPT  
Conference Date 2016-03-07 - 2016-03-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto Univ. Uji Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wireless Power Transfer, SPS Technology, etc 
Paper Information
Registration To WPT 
Conference Code 2016-03-WPT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes 
Sub Title (in English)  
Keyword(1) microwave power transfer  
Keyword(2) high power  
Keyword(3) rectifier  
Keyword(4) GaN schottky barrier diode  
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1st Author's Name Takaki Nishimura  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Tomohiko Mitani  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Naoki Shinohara  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Masaya Okada  
4th Author's Affiliation Sumitomo Elctric Industries, LTD (SEI)
5th Author's Name Yuusuke Yoshizumi  
5th Author's Affiliation Sumitomo Elctric Industries, LTD (SEI)
6th Author's Name Masaki Ueno  
6th Author's Affiliation Sumitomo Elctric Industries, LTD (SEI)
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Speaker Author-1 
Date Time 2016-03-08 09:50:00 
Presentation Time 25 minutes 
Registration for WPT 
Paper # WPT2015-87 
Volume (vol) vol.115 
Number (no) no.498 
Page pp.61-65 
#Pages 5 
Date of Issue 2016-02-29 (WPT) 

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