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Paper Abstract and Keywords
Presentation 2016-04-09 11:15
Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack
Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15
Abstract (in Japanese) (See Japanese page) 
(in English) Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin film transistors (TFTs) were fabricated using nickel-induced solid-phase crystallization (Ni-SPC), an inexpensive crystallization process, at low temperature. In this experiment, we used high-k HfO2 gate stacks to enhance the performance of the TFTs and achieved a low subthreshold swing value (s-value) and high on-current.
Keyword (in Japanese) (See Japanese page) 
(in English) Metal Induced Crystallization / Ni-SPC / TFT / Poly-Si / Four-Terminal / Double-Gate / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 1, SDM2016-15, pp. 61-65, April 2016.
Paper # SDM2016-15 
Date of Issue 2016-04-01 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-15 OME2016-15

Conference Information
Committee SDM OME  
Conference Date 2016-04-08 - 2016-04-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Prefectural Museum & Art Museum 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices, etc 
Paper Information
Registration To SDM 
Conference Code 2016-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack 
Sub Title (in English)  
Keyword(1) Metal Induced Crystallization  
Keyword(2) Ni-SPC  
Keyword(3) TFT  
Keyword(4) Poly-Si  
Keyword(5) Four-Terminal  
Keyword(6) Double-Gate  
Keyword(7)  
Keyword(8)  
1st Author's Name Syota Nibe  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Hiroki Ohsawa  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
3rd Author's Name Akito Hara  
3rd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker Author-2 
Date Time 2016-04-09 11:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2016-15, OME2016-15 
Volume (vol) vol.116 
Number (no) no.1(SDM), no.2(OME) 
Page pp.61-65 
#Pages 5 
Date of Issue 2016-04-01 (SDM, OME) 

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