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Paper Abstract and Keywords
Presentation 2016-04-14 10:35
[Invited Lecture] A 7T-SRAM with Data-Write Technique by Capacitive Coupling
Daisaburo Takashima, Masato Endo (Toshiba), Kazuhiro Shimazaki, Manabu Sai (Toshiba Microelectronics), Masaaki Tanino (Toshia Information Systems) ICD2016-2
Abstract (in Japanese) (See Japanese page) 
(in English) A 7T-SRAM, in which cell data is written by capacitive coupling, is proposed. The elimination of current-drive in read/write operation solves current-conflict problems. No degradation of noise margin reduces Vddmin by 0.3V~0.1V. A prototype of 64b 7T-SRAM with 8.74um2 cell, comparable to 6T-SRAM, using 24nm 3.3V high-voltage CMOS process has been demonstrated for nonvolatile RAMs (NVRAMs) page buffer application. The 7T-SRAM macro has achieved 100% macro yield and low soft error rate (SER) of 400 FIT/Mb at 1.6V Vddmin, which is equal to |Vtp|+|Vtn| for 0.1uA low standby current.
Keyword (in Japanese) (See Japanese page) 
(in English) Static RAM / SRAM / Capacitive Coupling / Static Noise Margin / SNM / Resistive Memory / Page Buffer /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 3, ICD2016-2, pp. 7-12, April 2016.
Paper # ICD2016-2 
Date of Issue 2016-04-07 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2016-04-14 - 2016-04-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2016-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 7T-SRAM with Data-Write Technique by Capacitive Coupling 
Sub Title (in English)  
Keyword(1) Static RAM  
Keyword(2) SRAM  
Keyword(3) Capacitive Coupling  
Keyword(4) Static Noise Margin  
Keyword(5) SNM  
Keyword(6) Resistive Memory  
Keyword(7) Page Buffer  
Keyword(8)  
1st Author's Name Daisaburo Takashima  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Masato Endo  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Kazuhiro Shimazaki  
3rd Author's Affiliation Toshiba Microelectronics Corporation (Toshiba Microelectronics)
4th Author's Name Manabu Sai  
4th Author's Affiliation Toshiba Microelectronics Corporation (Toshiba Microelectronics)
5th Author's Name Masaaki Tanino  
5th Author's Affiliation Toshia Information Systems Corporation (Toshia Information Systems)
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Speaker Author-1 
Date Time 2016-04-14 10:35:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2016-2 
Volume (vol) vol.116 
Number (no) no.3 
Page pp.7-12 
#Pages 6 
Date of Issue 2016-04-07 (ICD) 

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