Paper Abstract and Keywords |
Presentation |
2016-06-29 11:15
Fabrication of ferroelectric nanowire capacitors
-- Towards high-density non-volatile ferroelectric memories -- Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo) SDM2016-35 Link to ES Tech. Rep. Archives: SDM2016-35 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We demonstrated fabrication of ZnO/(Hf,Zr)O_2/ZnO nanowire capacitors fabricated by metalorganic chemical vapor deposition (MOCVD). ZnO nanowires with an average diameter of 110 nm and an aspect ratio of 90 was used as a positive template. Dielectric (Hf,Zr)O_2 layers were deposited at 200^oC and crystallized by post-annealing at 800^oC for 1 min in the atmosphere. XRD analysis revealed that (Hf,Zr)O_2 layers were composed of monoclinic and tetragonal/orthorhombic mixed phases. The tri-layered structure of the nanowires was confirmed by scanning electron microscopy. The diameters and aspect ratio of the resultant nanowire capacitors are 200-300 nm and above 30, respectively. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
non-volatile ferroelectric memories / nanowire capacitors / ZnO / (Hf,Zr)O_2 / MOCVD / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 118, SDM2016-35, pp. 15-19, June 2016. |
Paper # |
SDM2016-35 |
Date of Issue |
2016-06-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2016-35 Link to ES Tech. Rep. Archives: SDM2016-35 |
Conference Information |
Committee |
SDM |
Conference Date |
2016-06-29 - 2016-06-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Campus Innovation Center Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
Paper Information |
Registration To |
SDM |
Conference Code |
2016-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication of ferroelectric nanowire capacitors |
Sub Title (in English) |
Towards high-density non-volatile ferroelectric memories |
Keyword(1) |
non-volatile ferroelectric memories |
Keyword(2) |
nanowire capacitors |
Keyword(3) |
ZnO |
Keyword(4) |
(Hf,Zr)O_2 |
Keyword(5) |
MOCVD |
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Hironori Fujisawa |
1st Author's Affiliation |
University of Hyogo (Univ. Hyogo) |
2nd Author's Name |
Masaru Shimizu |
2nd Author's Affiliation |
University of Hyogo (Univ. Hyogo) |
3rd Author's Name |
Seiji Nakashima |
3rd Author's Affiliation |
University of Hyogo (Univ. Hyogo) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2016-06-29 11:15:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2016-35 |
Volume (vol) |
vol.116 |
Number (no) |
no.118 |
Page |
pp.15-19 |
#Pages |
5 |
Date of Issue |
2016-06-22 (SDM) |
|