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Paper Abstract and Keywords
Presentation 2016-06-29 10:00
[Invited Lecture] Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor
Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical properties of TiN/HfSiO/TiN structures. From FT-IR measurement, it is found that the emergence of ferroelectricity in HfSiO is closely related with the degree of crystallinity of HfO2. Furthermore, it was found that the top TiN deposition process affects the electrical characteristics of ferroelectric TiN/HfSiO/TiN MIMCAPs.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric HfO2 / TiN / FT-IR / XRD / C-V / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 118, SDM2016-32, pp. 1-4, June 2016.
Paper # SDM2016-32 
Date of Issue 2016-06-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2016-06-29 - 2016-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Campus Innovation Center Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2016-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor 
Sub Title (in English)  
Keyword(1) Ferroelectric HfO2  
Keyword(2) TiN  
Keyword(3) FT-IR  
Keyword(4) XRD  
Keyword(5) C-V  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuuichi Kamimuta  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Shosuke Fujii  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Riichiro Takaishi  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Tsunehiro Ino  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Yasushi Nakasaki  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Masumi Saitoh  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Masato Koyama  
7th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2016-06-29 10:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2016-32 
Volume (vol) vol.116 
Number (no) no.118 
Page pp.1-4 
#Pages 4 
Date of Issue 2016-06-22 (SDM) 

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