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Paper Abstract and Keywords
Presentation 2016-06-29 15:05
Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces
Shuhei Hayami, Satoshi Toyoda, Katsutoshi Fukuda (Kyoto Univ.), Hidetaka Sugaya (Panasonic), Masahito Morita, Akiyoshi Nakata, Yoshiharu Uchimoto, Eiichiro Matsubara (Kyoto Univ.) SDM2016-42
Abstract (in Japanese) (See Japanese page) 
(in English) On the basis of material design for ReRAM, the interfacial band offset between insulators and Si substrate is one of the key parameters in terms of a decrease in leakage current. It has been, however, difficult in spectroscopic approach to predict and evaluate band offsets with high accuracy because of film deposition process and surface charging. We have developed a surface charge switched electron spectroscopy, and compared how the TaNS/Si interfacial band offset had changed with or without UV irradiation, which caused to increase the band offset of a bilayer sample following the divergence of TaNS/SiO2 interfacial dipoles.
Keyword (in Japanese) (See Japanese page) 
(in English) ultraviolet irradiation / nanosheet / photoelectron spectroscopy / band offset / interfacial dipole / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 118, SDM2016-42, pp. 53-58, June 2016.
Paper # SDM2016-42 
Date of Issue 2016-06-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2016-06-29 - 2016-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Campus Innovation Center Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2016-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces 
Sub Title (in English)  
Keyword(1) ultraviolet irradiation  
Keyword(2) nanosheet  
Keyword(3) photoelectron spectroscopy  
Keyword(4) band offset  
Keyword(5) interfacial dipole  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shuhei Hayami  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Satoshi Toyoda  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Katsutoshi Fukuda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Hidetaka Sugaya  
4th Author's Affiliation Panasonic Cooperation (Panasonic)
5th Author's Name Masahito Morita  
5th Author's Affiliation Kyoto University (Kyoto Univ.)
6th Author's Name Akiyoshi Nakata  
6th Author's Affiliation Kyoto University (Kyoto Univ.)
7th Author's Name Yoshiharu Uchimoto  
7th Author's Affiliation Kyoto University (Kyoto Univ.)
8th Author's Name Eiichiro Matsubara  
8th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2016-06-29 15:05:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2016-42 
Volume (vol) vol.116 
Number (no) no.118 
Page pp.53-58 
#Pages 6 
Date of Issue 2016-06-22 (SDM) 

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