| Paper Abstract and Keywords |
| Presentation |
2016-06-29 17:00
[Invited Lecture]
Growth and characterization of atomically-thin transition metal dichalcogenides Yasumitsu Miyata (Tokyo Metropolitan Univ.) SDM2016-47 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Recently, atomic layers of transition metal dichalcogenides (TMDCs) have attracted much attention because of their unique two-dimensional structure and highly tunable electronic properties. To maximize their potential in electronics and optoelectronics, it is essential to develop a sophisticated growth process of high quality TMDC atomic layers and their heterostructures. In this presentation, we report our recent studies on chemical vapor deposition growth of high quality TMDC atomic layers and TMDC-based lateral heterostructures. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Atomic layer / Transition metal dichalcogenide / Chemical vapor deposition / Heterostructures / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 116, no. 118, SDM2016-47, pp. 79-84, June 2016. |
| Paper # |
SDM2016-47 |
| Date of Issue |
2016-06-22 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
SDM2016-47 |
| Conference Information |
| Committee |
SDM |
| Conference Date |
2016-06-29 - 2016-06-29 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Campus Innovation Center Tokyo |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Material Science and Process Technology for MOS Devices and Memories |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2016-06-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Growth and characterization of atomically-thin transition metal dichalcogenides |
| Sub Title (in English) |
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| Keyword(1) |
Atomic layer |
| Keyword(2) |
Transition metal dichalcogenide |
| Keyword(3) |
Chemical vapor deposition |
| Keyword(4) |
Heterostructures |
| Keyword(5) |
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| Keyword(6) |
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| 1st Author's Name |
Yasumitsu Miyata |
| 1st Author's Affiliation |
Tokyo Metropolitan University (Tokyo Metropolitan Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2016-06-29 17:00:00 |
| Presentation Time |
20 minutes |
| Registration for |
SDM |
| Paper # |
SDM2016-47 |
| Volume (vol) |
vol.116 |
| Number (no) |
no.118 |
| Page |
pp.79-84 |
| #Pages |
6 |
| Date of Issue |
2016-06-22 (SDM) |