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| Presentation | 2016-06-29 14:10 XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2016-40 Link to ES Tech. Rep. Archives: SDM2016-40 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectrics was proposed, and the determination of electron affinity (χ) for Si, 4H-SiC, and SiO2 was demonstrated. In addition, inner potential change and electrical dipole in the region near the SiO2/Si and SiO2/4H-SiC gate stack have been evaluated from analysis of the cut-off energy for secondary photoelectron. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si / 4H-SiC / SiO2 / X-ray photoelectron Spectroscopy / Potential Change / Electrical Dipole / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 118, SDM2016-40, pp. 43-47, June 2016. | |
| Paper # | SDM2016-40 | |
| Date of Issue | 2016-06-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-40 Link to ES Tech. Rep. Archives: SDM2016-40 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-06-29 - 2016-06-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | 4H-SiC |
| Keyword(3) | SiO2 |
| Keyword(4) | X-ray photoelectron Spectroscopy |
| Keyword(5) | Potential Change |
| Keyword(6) | Electrical Dipole |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Nobuyuki Fujimura |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Akio Ohta |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Hiromasa Watanabe |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Katsunori Makihara |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-06-29 14:10:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2016-40 |
| Volume (vol) | vol.116 |
| Number (no) | no.118 |
| Page | pp.43-47 |
| #Pages | 5 |
| Date of Issue | 2016-06-22 (SDM) |
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