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Paper Abstract and Keywords
Presentation 2016-06-29 11:55
Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37
Abstract (in Japanese) (See Japanese page) 
(in English) We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition and post-deposition annealing (PDA) at 600 oC in O2. The dielectric constant of ZrO2 single-layer exhibited about 28 because of the tetragonal, orthorhombic and cubic phase. The leakage current density of TiN/ZAZ/TiN MIM capacitor with 0.3 nm thick Al2O3 layer was drastically reduced by 1/6 compared to that of TiN/ZrO2/TiN capacitor. In addition, the k value of the overall insulating layer maintained around 28 in regions of 0.4 nm thick or less Al2O3 layer. We found that ZAZ multilayer with 0.3 nm thick Al2O3 layer plays an important role of the reduction of the leakage current density without decline of the k value of the overall insulating layer.
Keyword (in Japanese) (See Japanese page) 
(in English) ZrO2/Al2O3/ZrO2 (ZAZ) / DRAM / Atomic layer deposition (ALD) / high-k / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 118, SDM2016-37, pp. 27-32, June 2016.
Paper # SDM2016-37 
Date of Issue 2016-06-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2016-06-29 - 2016-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Campus Innovation Center Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2016-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer 
Sub Title (in English)  
Keyword(1) ZrO2/Al2O3/ZrO2 (ZAZ)  
Keyword(2) DRAM  
Keyword(3) Atomic layer deposition (ALD)  
Keyword(4) high-k  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Takashi Onaya  
1st Author's Affiliation Meiji University/National Institute for Materials Science (Meiji Univ./NIMS)
2nd Author's Name Toshihide Nabatame  
2nd Author's Affiliation National Institute for Materials Science/JST-CREST (NIMS/JST-CREST)
3rd Author's Name Tomomi Sawada  
3rd Author's Affiliation National Institute for Materials Science/JST-CREST (NIMS/JST-CREST)
4th Author's Name Kazunori Kurishima  
4th Author's Affiliation Meiji University/National Institute for Materials Science (Meiji Univ./NIMS)
5th Author's Name Naomi Sawamoto  
5th Author's Affiliation Meiji University (Meiji Univ.)
6th Author's Name Akihiko Ohi  
6th Author's Affiliation National Institute for Materials Science (NIMS)
7th Author's Name Toyohiro Chikyo  
7th Author's Affiliation National Institute for Materials Science (NIMS)
8th Author's Name Atsushi Ogura  
8th Author's Affiliation Meiji University (Meiji Univ.)
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Speaker Author-1 
Date Time 2016-06-29 11:55:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2016-37 
Volume (vol) vol.116 
Number (no) no.118 
Page pp.27-32 
#Pages 6 
Date of Issue 2016-06-22 (SDM) 

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