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Paper Abstract and Keywords
Presentation 2016-07-08 14:55
[Invited Talk] Atomic switch-type resistance change memory based on cation transport in oxide thin films
Tohru Tsuruoka (NIMS) MR2016-17
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the switching mechanism and functionalities of Cu,Ag/Ta2O5/Pt atomic switch-type resistance change memories based on the transport of metal ions in oxide thin films and electrochemical reactions at metal/oxide interfaces. We proposed the operation model and confirmed the validity of our model. The effects of moisture absorption in the oxide matrix and of redox reactions at Ag,Cu/Ta2O5 interfaces on the switching characteristics are discussed. As the unique function of atomic switches, the conductance quantization and synaptic behavior are also demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) oxide / cation transport / redox reaction / Moisture absorption / conductance quantization / synaptic behavior / /  
Reference Info. IEICE Tech. Rep., vol. 116, July 2016.
Paper #  
Date of Issue 2016-07-01 (MR) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MR2016-17

Conference Information
Committee MRIS ITE-MMS  
Conference Date 2016-07-08 - 2016-07-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Chuo Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Solid State Memory, Media, etc. 
Paper Information
Registration To MRIS 
Conference Code 2016-07-MR-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Atomic switch-type resistance change memory based on cation transport in oxide thin films 
Sub Title (in English)  
Keyword(1) oxide  
Keyword(2) cation transport  
Keyword(3) redox reaction  
Keyword(4) Moisture absorption  
Keyword(5) conductance quantization  
Keyword(6) synaptic behavior  
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1st Author's Name Tohru Tsuruoka  
1st Author's Affiliation National Institute for Materials Science (NIMS)
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Speaker Author-1 
Date Time 2016-07-08 14:55:00 
Presentation Time 50 minutes 
Registration for MRIS 
Paper # MR2016-17 
Volume (vol) vol.116 
Number (no) no.125 
Page pp.25-29 
#Pages 5 
Date of Issue 2016-07-01 (MR) 

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