Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-07-23 15:05
Effects of post-deposition anneal on SiO2 layer on Ga2O3
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29
Abstract (in Japanese) (See Japanese page) 
(in English) Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4.5 eV. A high quality SiO2 film is essential for fabrication of field plate and/or passivation layer to improve the breakdown voltage of power devices. In this work, the effects of post-deposition anneal on the properties of SiO2 deposited on Ga2O3 and the SiO2/Ga2O3 interface were investigated to evaluate the optimal process conditions. The C-V characteristics of devices annealed at over 800°C showed a ledge at around 0 V, which could arise from electron trapping at the SiO2/Ga2O3 interface induced by high temperature annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium oxide / Silicon dioxide / Photoassisted C-V measurement / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 158, ED2016-29, pp. 11-15, July 2016.
Paper # ED2016-29 
Date of Issue 2016-07-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-29

Conference Information
Committee ED  
Conference Date 2016-07-23 - 2016-07-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Metropolitan Univ. Minami-Osawa Campus, International House 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Processes and Devices 
Paper Information
Registration To ED 
Conference Code 2016-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of post-deposition anneal on SiO2 layer on Ga2O3 
Sub Title (in English)  
Keyword(1) Gallium oxide  
Keyword(2) Silicon dioxide  
Keyword(3) Photoassisted C-V measurement  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Keita Konishi  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Takafumi Kamimura  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Man Hoi Wong  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Kohei Sasaki  
4th Author's Affiliation Tamura Corp. (Tamura Corp.)
5th Author's Name Akito Kuramata  
5th Author's Affiliation Tamura Corp. (Tamura Corp.)
6th Author's Name Shigenobu Yamakoshi  
6th Author's Affiliation Tamura Corp. (Tamura Corp.)
7th Author's Name Masataka Higashiwaki  
7th Author's Affiliation National Institute of Information and Communications Technology (NICT)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2016-07-23 15:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-29 
Volume (vol) vol.116 
Number (no) no.158 
Page pp.11-15 
#Pages 5 
Date of Issue 2016-07-16 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan