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Paper Abstract and Keywords
Presentation 2016-07-24 09:55
Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current
Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) ED2016-33
Abstract (in Japanese) (See Japanese page) 
(in English) Hole-tunneling Si1-xGex/Si asymmetric-double-quantum-well resonant tunneling diode (ASDQW p-RTD) was optimized in terms of its structure and fabrication processes with the gas-source molecular beam epitaxy (GSMBE) method. From the aspect of crystallinity, the maximum Ge content was found to be ~0.18. We also designed the p-RTD so that the difference between the barrier height, in the collector side, and the resonant tunneling energy at the resonance voltage became larger. The fabricated Si0.82Ge0.18/Si p-RTD exhibited the highest performance with a resonant tunneling current ratio (PVCR) of 16, with suppression of thermionic emission, which are larger than those reported by others by factors of 1.5 and 7, respectively.
Keyword (in Japanese) (See Japanese page) 
(in English) Resonance tunneling diode / SiGe / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 158, ED2016-33, pp. 31-34, July 2016.
Paper # ED2016-33 
Date of Issue 2016-07-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-33

Conference Information
Committee ED  
Conference Date 2016-07-23 - 2016-07-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Metropolitan Univ. Minami-Osawa Campus, International House 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Semiconductor Processes and Devices 
Paper Information
Registration To ED 
Conference Code 2016-07-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current 
Sub Title (in English)  
Keyword(1) Resonance tunneling diode  
Keyword(2) SiGe  
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1st Author's Name Ayaka Shinkawa  
1st Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agric. and Tech.)
2nd Author's Name Minoru Wakiya  
2nd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agric. and Tech.)
3rd Author's Name Yuki Maeda  
3rd Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agric. and Tech.)
4th Author's Name Takahiro Tsukamoto  
4th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agric. and Tech.)
5th Author's Name Yoshiyuki Suda  
5th Author's Affiliation Tokyo University of Agriculture and Technology (Tokyo Univ. of Agric. and Tech.)
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Speaker Author-1 
Date Time 2016-07-24 09:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-33 
Volume (vol) vol.116 
Number (no) no.158 
Page pp.31-34 
#Pages 4 
Date of Issue 2016-07-16 (ED) 

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