Paper Abstract and Keywords |
Presentation |
2016-08-03 11:25
[Invited Talk]
A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device
-- Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits -- Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno (Tohoku Univ.) SDM2016-63 ICD2016-31 Link to ES Tech. Rep. Archives: SDM2016-63 ICD2016-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices allow high-speed operation and relaxed design constraints compared with the two-terminal counterpart. We here review our recent studies on three-terminal devices with spin-orbit torque induced switching, which can be reliably operated with sub-ns current pulses. Advanced structures and material engineering to further improve the device properties are also discussed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Spin-Orbit Torque / Three-Terminal Spintronics Device / Nonvolatile Memory / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 172, SDM2016-63, pp. 99-103, Aug. 2016. |
Paper # |
SDM2016-63 |
Date of Issue |
2016-07-25 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2016-63 ICD2016-31 Link to ES Tech. Rep. Archives: SDM2016-63 ICD2016-31 |
Conference Information |
Committee |
ICD SDM ITE-IST |
Conference Date |
2016-08-01 - 2016-08-03 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Central Electric Club |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2016-08-ICD-SDM-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device |
Sub Title (in English) |
Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits |
Keyword(1) |
Spin-Orbit Torque |
Keyword(2) |
Three-Terminal Spintronics Device |
Keyword(3) |
Nonvolatile Memory |
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1st Author's Name |
Shunsuke Fukami |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Tetsuro Anekawa |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Ayato Ohkawara |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Chaoliang Zhang |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
5th Author's Name |
Hideo Ohno |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2016-08-03 11:25:00 |
Presentation Time |
45 minutes |
Registration for |
SDM |
Paper # |
SDM2016-63, ICD2016-31 |
Volume (vol) |
vol.116 |
Number (no) |
no.172(SDM), no.173(ICD) |
Page |
pp.99-103 |
#Pages |
5 |
Date of Issue |
2016-07-25 (SDM, ICD) |
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