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Presentation 2016-08-03 11:25
[Invited Talk] A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device -- Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits --
Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno (Tohoku Univ.) SDM2016-63 ICD2016-31 Link to ES Tech. Rep. Archives: SDM2016-63 ICD2016-31
Abstract (in Japanese) (See Japanese page) 
(in English) Integrated circuits with non-volatile spintronics memory devices open up new pathways toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices allow high-speed operation and relaxed design constraints compared with the two-terminal counterpart. We here review our recent studies on three-terminal devices with spin-orbit torque induced switching, which can be reliably operated with sub-ns current pulses. Advanced structures and material engineering to further improve the device properties are also discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) Spin-Orbit Torque / Three-Terminal Spintronics Device / Nonvolatile Memory / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 172, SDM2016-63, pp. 99-103, Aug. 2016.
Paper # SDM2016-63 
Date of Issue 2016-07-25 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-63 ICD2016-31 Link to ES Tech. Rep. Archives: SDM2016-63 ICD2016-31

Conference Information
Committee ICD SDM ITE-IST  
Conference Date 2016-08-01 - 2016-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Central Electric Club 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2016-08-ICD-SDM-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Three-Terminal Spin-Orbit Torque Switching Magnetic Memory Device 
Sub Title (in English) Toward Realization of High-Speed and Low-Power Nonvolatile Integrated Circuits 
Keyword(1) Spin-Orbit Torque  
Keyword(2) Three-Terminal Spintronics Device  
Keyword(3) Nonvolatile Memory  
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1st Author's Name Shunsuke Fukami  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tetsuro Anekawa  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Ayato Ohkawara  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Chaoliang Zhang  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Hideo Ohno  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2016-08-03 11:25:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # SDM2016-63, ICD2016-31 
Volume (vol) vol.116 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.99-103 
#Pages
Date of Issue 2016-07-25 (SDM, ICD) 


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