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Paper Abstract and Keywords
Presentation 2016-08-25 09:20
Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates
Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo (NTT) R2016-19 EMD2016-23 CPM2016-32 OPE2016-53 LQE2016-28
Abstract (in Japanese) (See Japanese page) 
(in English) It is required to reduce energy consumptions of directly modulated semiconductor lasers to realize very short distance optical interconnects. Chip to chip optical interconnects require lasers with their active length of 10~20 $myu$m. We have developed ultra-short cavity InP-based membrane lasers on SiO2/Si substrates, because these structures enable small energy consumptions due to the large optical confinement. By applying distributed Bragg reflector (DBR) structures, we successfully reduced the active length to 10 $myu$m. The DBR laser exhibited a threshold current of 0.17 mA. We also fabricated 20 $myu$m long $lambda$/4-shifted DFB lasers with DBR mirrors on the both sides (twin mirror DR laser). It exhibits a threshold current of 0.66 mA.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor Laser / Wafer bonding / Silicon photonics / Short cavity laser / DBR laser / DR laser / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 195, LQE2016-28, pp. 1-4, Aug. 2016.
Paper # LQE2016-28 
Date of Issue 2016-08-18 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2016-19 EMD2016-23 CPM2016-32 OPE2016-53 LQE2016-28

Conference Information
Committee LQE OPE EMD R CPM  
Conference Date 2016-08-25 - 2016-08-26 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2016-08-LQE-OPE-EMD-R-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates 
Sub Title (in English)  
Keyword(1) Semiconductor Laser  
Keyword(2) Wafer bonding  
Keyword(3) Silicon photonics  
Keyword(4) Short cavity laser  
Keyword(5) DBR laser  
Keyword(6) DR laser  
Keyword(7)  
Keyword(8)  
1st Author's Name Erina Kanno  
1st Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
2nd Author's Name Koji Takeda  
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
3rd Author's Name Takuro Fujii  
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
4th Author's Name Koichi Hasebe  
4th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
5th Author's Name Hidetaka Nishi  
5th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
6th Author's Name Tsuyoshi Yamamoto  
6th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
7th Author's Name Takaaki Kakitsuka  
7th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
8th Author's Name Shinji Matsuo  
8th Author's Affiliation Nippon Telegraph and Telephone Corporation (NTT)
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Speaker Author-1 
Date Time 2016-08-25 09:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # R2016-19, EMD2016-23, CPM2016-32, OPE2016-53, LQE2016-28 
Volume (vol) vol.116 
Number (no) no.191(R), no.192(EMD), no.193(CPM), no.194(OPE), no.195(LQE) 
Page pp.1-4 
#Pages 4 
Date of Issue 2016-08-18 (R, EMD, CPM, OPE, LQE) 

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