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Paper Abstract and Keywords
Presentation 2016-10-26 11:50
Radiation tolerance of CdTe/CdS photoconductive target
Tomoaki Masuzawa, Yoichiro Neo (Shizuoka Univ.), Yasuhito Gotoh (Kyoto Univ.), Tamotsu Okamoto (National Inst. of Technol. Kisarazu College), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Prefecture Univ.), Ikuji Takagi (Kyoto Univ.), Hidenori Mimura (Shizuoka Univ.) ED2016-56 Link to ES Tech. Rep. Archives: ED2016-56
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, radiation tolerance of CdTe/CdS photodiode was investigated. Irradiation of gamma-ray from cobalt-60 with a total dose of 1 MGy did not result in degradation of photoconductivity. The present result suggests that this type of photodiode is suitable to be used as a photoconductive target of a vidicon-type image sensor.
Keyword (in Japanese) (See Japanese page) 
(in English) Radiation-tolerant / Image sensor / CdTe / FEA / gamma-ray / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 268, ED2016-56, pp. 63-66, Oct. 2016.
Paper # ED2016-56 
Date of Issue 2016-10-18 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-56 Link to ES Tech. Rep. Archives: ED2016-56

Conference Information
Committee ED  
Conference Date 2016-10-25 - 2016-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2016-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Radiation tolerance of CdTe/CdS photoconductive target 
Sub Title (in English)  
Keyword(1) Radiation-tolerant  
Keyword(2) Image sensor  
Keyword(3) CdTe  
Keyword(4) FEA  
Keyword(5) gamma-ray  
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Keyword(8)  
1st Author's Name Tomoaki Masuzawa  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Yoichiro Neo  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Yasuhito Gotoh  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Tamotsu Okamoto  
4th Author's Affiliation National Institute of Technology, Kisarazu College (National Inst. of Technol. Kisarazu College)
5th Author's Name Masayoshi Nagao  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Nobuhiro Sato  
6th Author's Affiliation Kyoto University (Kyoto Univ.)
7th Author's Name Masafumi Akiyoshi  
7th Author's Affiliation Osaka Prefecture University (Osaka Prefecture Univ.)
8th Author's Name Ikuji Takagi  
8th Author's Affiliation Kyoto University (Kyoto Univ.)
9th Author's Name Hidenori Mimura  
9th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2016-10-26 11:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-56 
Volume (vol) vol.116 
Number (no) no.268 
Page pp.63-66 
#Pages
Date of Issue 2016-10-18 (ED) 


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