Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-10-26 15:30
[Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71
Abstract (in Japanese) (See Japanese page) 
(in English) Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation voltage (Vdd). In the ultralow-Vdd regime, however, the upsurging delay (τpd) variability is the most important challenge. This paper proposes the balanced n/p drivability control method for reducing the die-to-die delay variation by back bias applicable for various circuits. Excellent variability reduction by this balanced control is demonstrated at Vdd = 0.4 V.
Keyword (in Japanese) (See Japanese page) 
(in English) SOTB / SOI / back bias / ring oscillator / Tpd / variability / ultra-low voltage /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 270, SDM2016-71, pp. 15-20, Oct. 2016.
Paper # SDM2016-71 
Date of Issue 2016-10-19 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-71

Conference Information
Committee SDM  
Conference Date 2016-10-26 - 2016-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2016-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation 
Sub Title (in English)  
Keyword(1) SOTB  
Keyword(2) SOI  
Keyword(3) back bias  
Keyword(4) ring oscillator  
Keyword(5) Tpd  
Keyword(6) variability  
Keyword(7) ultra-low voltage  
Keyword(8)  
1st Author's Name Hideki Makiyama  
1st Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
2nd Author's Name Yoshiki Yamamoto  
2nd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
3rd Author's Name Takumi Hasegawa  
3rd Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
4th Author's Name Shinobu Okanishi  
4th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
5th Author's Name Keiichi Maekawa  
5th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
6th Author's Name Hiroki Shinkawata  
6th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
7th Author's Name Shiro Kamohara  
7th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
8th Author's Name Yasuo Yamaguchi  
8th Author's Affiliation Renesas Electronics Corporation (Renesas Electronics Corp.)
9th Author's Name Nobuyuki Sugii  
9th Author's Affiliation Hitachi Ltd (Hitach)
10th Author's Name Koichiro Ishibashi  
10th Author's Affiliation The University of Electro-Communications (The Univ. of Electro-Communications)
11th Author's Name Tomoko Mizutani  
11th Author's Affiliation The Universty of Tokyo (The Univ. of Tokyo)
12th Author's Name Toshiro Hiramoto  
12th Author's Affiliation The Universty of Tokyo (The Univ. of Tokyo)
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2016-10-26 15:30:00 
Presentation Time 40 minutes 
Registration for SDM 
Paper # SDM2016-71 
Volume (vol) vol.116 
Number (no) no.270 
Page pp.15-20 
#Pages 6 
Date of Issue 2016-10-19 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan